IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET
Price:
Negotiate
MOQ:
10pcs
Delivery Time:
1 day
Product Description
HEXFET Power MOSFET
| VDSS | RDS(on) max | ID |
| 200V | 0.082Ω | 31A |
Applications
- High Frequency DC-DC converters
- Lead-Free
Benefits
- Low Gate to Drain to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001)
- Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings
| Parameter | Max. | Unit | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 31‡ | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 21 | A |
| IDM | Pulsed Drain Current | 124 | A |
| PD @TA = 25°C | Power Dissipation | 3.1 | W |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 30 | V |
| dv/dt | Peak Diode Recovery dv/dt ƒ | 2.1 | V/ns |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
Stock Offer (Hot Sell)
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Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo