STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET
STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK
Zener-Protected SuperMESH™ MOSFET
General features
| Type | VDSS(@Tj max) | RDS(on) | ID |
|
STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP |
550 V 550 V 550 V 550 V |
<0.25 Ω <0.25 Ω <0.25 Ω <0.25 Ω |
20 A 20 A 20 A 20 A |
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.
Applications
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies.
Absolute maximum ratings
| Symbol | Parameter | Value | Unit | |
| TO-220/D²PAK/I²PAK | TO-220FP | |||
| VGS | Gate-Source Voltage | ± 30 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 20 | 20 (Note 3) | A |
| ID | Drain Current (continuous) at TC = 100°C | 12.6 | 12.6 (Note 3) | A |
| IDM Note 2 | Drain Current (pulsed) | 80 | 80 (Note 3) | A |
| PTOT | Total Dissipation at TC = 25°C | 192 | 45 | W |
| Derating Factor | 1.2 | 0.36 | W/°C | |
| dv/dt Note 1 | Peak Diode Recovery voltage slope | 15 | V/ns | |
| VISO | Insulation Withstand Volatge (DC) | - | 2000 | V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-65 to 150 | °C | |
Package
Internal schematic diagram
Stock Offer (Hot Sell)
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