SPA08N80C3 CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

Price Negotiable

Price: Negotiation

MOQ: 5pcs

Delivery Time: 1 Day

Product Description

SPA08N80C3 CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

Features

• New revolutionary high voltage technology

VDS	800	V
R DS(on)max @ Tj = 25°C	0.65	Ω
Q g,typ	45	nC

• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )

Maximum ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current2)	I D	T C=25 °C T C=100 °C	8 5.1	A
Pulsed drain current3)	I D,pulse	T C=25 °C	24	A
Avalanche energy, single pulse	E AS	I D=1.6 A, V DD=50 V	340	mJ
Avalanche energy, repetitive t AR 3),4)	E AR	I D=8 A, V DD=50 V	0.2	mJ
Avalanche current, repetitive t AR 3),4)	I AR		8	A
MOSFET dv /dt ruggedness	dv /dt	V DS=0…640 V	50	V/ns
Gate source voltage	V GS	static AC (f >1 Hz)	±20 ±30	V
Power dissipation	P tot	T C=25 °C	40	W
Operating and storage temperature	T j , T stg		-55 ... 150	°C
Mounting torque		M2.5 screws	50	Ncm

STOCK LIST

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74LCX125MTCX	7500	FAIRCHILD	16+	TSOP
MC33298P	3206	ON	14+	DIP
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MC68000P8	3610	MOT	15+	DIP
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MRF182	6386	MOTOROLA	14+	SMD
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2SD1408Y	3000	TOSHIBA	16+	TO-220F
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C393C	1380	NEC	16+	DIP-8
DS1220AD-100IND+	500	DALLAS	15+	DIP-24
ME15N10-G	5956	MATSU	16+	TO-252
D3SB60	2200	SHINDENGE	14+	TO-220