New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893
Price:
Negotiate
MOQ:
100pcs
Delivery Time:
1 day
Product Description
| RATING | SYMBOL | MAX. | UNIT |
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Emitter Voltage | VCER | 100 | Vdc |
| Collector-Base Voltage | VCBO | 120 | Vdc |
| Emitter-Base Voltage | VEBO | 7.0 | Vdc |
| Collector Current - Continuous | IC | 0.5 | Adc |
| Total Device Dissipation @ T A = 25oC Derate above 25oC | PD | 0.8 | Watt mW/oC |
| Total Device Dissipation @ T C = 25oC Derate above 25oC | PD | 3.0 | Watt mW/oC |
| Operating Temperature Range | TJ | -55 to +200 | oC |
| Storage Temperature Range | TS | -55 to +200 | oC |
| Thermal Resistance, Junction to Ambient | RqJA | 219 | oC/W |
| Thermal Resistance, Junction to Case | RqJA | 58 | oC/W |
Mechanical Outline
| CHARACTERISTICS | SYMBOL | MIN. | TYP. | MAX. | UNIT |
| Off Characteristics | |||||
| Collector-Emitter Breakdown Voltage (I C = 100 mAdc, RBE = 10 ohms)(1) | BVCER | 100 | -- | ||
| Collector-Emitter Sustaining Voltage(1) (I C = 30 mAdc, IB = 0)(1) | BVCEO | 80 | -- | ||
| Collector-Base Breakdown Voltage (I C = 100 mAdc, IE = 0) | BV(BR)CBO | 120 | -- | Vdc | |
| Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0) | BV(BR)CBO | 7.0 | -- | ||
| Collector Cutoff Current (V CB = 90 Vdc, IE = 0) (V CB = 90 Vdc, IE = 0, TA = 150o C) | ICBO | -- | 0.01 | mAdc | |
| Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) | IEBO | -- | 0.01 | mAdc | |
| On Characteristics | |||||
| D.C. Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (I C = 10mAdc, VCE = 10 Vdc)(1) (I C = 10mAdc, VCE = 10 Vdc, TA = -55o C)(1) (I C = 150mAdc, VCE = 10 Vdc)(1) | hFE | 20 | -- | -- | |
| Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) | VCE(Sat) | -- | 0.5 | Vdc | |
| Base-Emitter Saturation Voltage(1) ( Ic = 150 mAdc, IB = 15 mAdc) | VCE(Sat) | -- | 1.3 | Vdc | |
| Magnitude of small signal short-circuit forward current ratio (I C = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) | /hfe/ | 3 | 10 | ||
| Output Capacitance (V CB = 10 Vdc, IE = 0, f = 1.0 MHz) | COBO | 5 | 15 | pF | |
| Input Impedance = (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0kHz) | hib | 4.0 | 8.0 | Ohms | |
| Voltage Feedback Ratio (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz) | hrb | -- | 1.5 | X 10-4 | |
| Small-Signal Current Gain (I c = 1.0 mAdc, VcB = 5.0Vdc, f = 1.0 kHz) (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz) | hfe | 35 | 100 | -- | |
| Output Admittance (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz) | hob | -- | 0.5 | mmho | |
| Pulse response (Vcc = 20Vdc, Ic = 500mAdc) | ton + tof | -- | 30 | ns |
(1) Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%.
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Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo