DS1225AD-200+ IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Analog Devices Inc./Maxim Integrated
Product Description
Product Details
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition.
FEATURES
10 years minimum data retention in the absence of external powerData is automatically protected during power loss
Directly replaces 8k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% VCCoperating range (DS1225AD)
Optional ±5% VCC operating range (DS1225AB)
Optional industrial temperature range of -40°C to +85°C, designated IND
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Maxim Integrated |
| Product Category | Memory ICs |
| Series | DS1225AD |
| Packaging | Tube |
| Mounting-Style | Through Hole |
| Package-Case | 28-DIP Module (0.600", 15.24mm) |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 4.5 V ~ 5.5 V |
| Supplier-Device-Package | 28-EDIP |
| Memory Capacity | 64K (8K x 8) |
| Memory-Type | NVSRAM (Non-Volatile SRAM) |
| Speed | 200ns |
| Access-Time | 200 ns |
| Format-Memory | RAM |
| Maximum Operating Temperature | + 70 C |
| Operating temperature range | 0 C |
| Operating-Supply-Current | 75 mA |
| Interface-Type | Parallel |
| Organization | 8 k x 8 |
| Part-#-Aliases | 90-1225A+D00 DS1225AD |
| Data-Bus-Width | 8 bit |
| Supply-Voltage-Max | 5.5 V |
| Supply-Voltage-Min | 4.5 V |
| Package-Case | EDIP-28 |
Functional compatible component
Form,Package,Functional compatible component
| Manufacturer Part# | Description | Manufacturer | Compare |
| DS1225Y-200+ Memory |
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, 0.720 INCH, ROHS COMPLIANT, DIP-28 | Maxim Integrated Products | DS1225AD-200+ vs DS1225Y-200+ |
| DS1225AB-200IND Memory |
8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDMA28, 0.720 INCH, DIP-28 | Rochester Electronics LLC | DS1225AD-200+ vs DS1225AB-200IND |
| DS1225Y-200 Memory |
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, 0.720 INCH, DIP-28 | Maxim Integrated Products | DS1225AD-200+ vs DS1225Y-200 |
| DS1225AD-200 Memory |
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDIP28, 0.720 INCH, EXTENDED, DIP-28 | Dallas Semiconductor | DS1225AD-200+ vs DS1225AD-200 |
| DS1225AB-200IND+ Memory |
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28 | Maxim Integrated Products | DS1225AD-200+ vs DS1225AB-200IND+ |
| BQ4010MA-200 Memory |
8KX8 NON-VOLATILE SRAM MODULE, 200ns, DMA28, DIP-28 | Texas Instruments | DS1225AD-200+ vs BQ4010MA-200 |
| BQ4010YMA-200 Memory |
8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDIP28 | Texas Instruments | DS1225AD-200+ vs BQ4010YMA-200 |
| DS1225AB-200 Memory |
8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDMA28, 0.720 INCH, DIP-28 | Rochester Electronics LLC | DS1225AD-200+ vs DS1225AB-200 |
| DS1225AB-200+ Memory |
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28 | Maxim Integrated Products | DS1225AD-200+ vs DS1225AB-200+ |
| DS1225AD-200IND+ Memory |
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28 | Maxim Integrated Products | DS1225AD-200+ vs DS1225AD-200IND+ |
Descriptions
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 200ns 28-EDIP
NVRAM 64k Nonvolatile SRAM
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao