71V25761S166PFG8 IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Renesas Electronics America Inc
Product Description
Product Details
DESCRIPTION
The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology.
FEATURES
• Ideal for high-performance processor secondary cache• Commercial (0° to 70°C) and Industrial (-40° to 85°C)
temperature options
• Fast access times:
— Commercial: 10/12/15/20ns
— Industrial: 15ns
• Low standby current (maximum):
— 2mA full standby
• Small packages for space-efficient layouts:
— 28-pin 300 mil SOJ
— 28-pin 300 mil plastic DIP (Commercial only)
— 28-pin TSOP Type I
• Produced with advanced high-performance CMOS
technology
• Inputs and outputs are LVTTL-compatible
• Single 3.3V(±0.3V) power supply
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Integrated Circuit Systems |
| Product Category | Memory ICs |
| Series | 71V25761S166 |
| Type | Synchronous |
| Packaging | Tape & Reel (TR) Alternate Packaging |
| Unit-Weight | 0.023175 oz |
| Mounting-Style | SMD/SMT |
| Package-Case | 100-LQFP |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3.135 V ~ 3.465 V |
| Supplier-Device-Package | 100-TQFP (14x20) |
| Memory Capacity | 4.5M (128K x 36) |
| Memory-Type | SRAM - Synchronous |
| Speed | 166MHz |
| Access-Time | 3.5 ns |
| Format-Memory | RAM |
| Maximum Operating Temperature | + 70 C |
| Operating temperature range | 0 C |
| Interface-Type | Parallel |
| Organization | 128 k x 36 |
| Supply-Current-Max | 320 mA |
| Part-#-Aliases | 71V25761 IDT71V25761S166PFG8 |
| Supply-Voltage-Max | 3.465 V |
| Supply-Voltage-Min | 3.135 V |
| Package-Case | TQFP-100 |
| Maximum-Clock-Frequency | 166 MHz |
| Manufacturer Part# | Description | Manufacturer | Compare |
| IDT71V25761S166PFI8 Memory |
Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Integrated Device Technology Inc | 71V25761S166PFG8 vs IDT71V25761S166PFI8 |
| 71V25761S166PFGI Memory |
Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100 | Integrated Device Technology Inc | 71V25761S166PFG8 vs 71V25761S166PFGI |
| IDT71V25761S166PF Memory |
Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 | Integrated Device Technology Inc | 71V25761S166PFG8 vs IDT71V25761S166PF |
| 71V25761S166PFG Memory |
TQFP-100, Tray | Integrated Device Technology Inc | 71V25761S166PFG8 vs 71V25761S166PFG |
| 71V25761S166PF8 Memory |
Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Integrated Device Technology Inc | 71V25761S166PFG8 vs 71V25761S166PF8 |
| IDT71V25761S166PFI Memory |
Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 | Integrated Device Technology Inc | 71V25761S166PFG8 vs IDT71V25761S166PFI |
Descriptions
SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Parallel 166MHz 3.5ns 100-TQFP (14x20)
SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao