MX25L6445EMI-10G FLASH - NOR Memory IC 64Mbit SPI 104 MHz 16-SOP Integrated Circuits ICs
Price:
Email us for details
MOQ:
1pcs
Delivery Time:
1day
Brand:
Macronix
Product Description
MX25L6445EMI-10G FLASH - NOR Memory IC 64Mbit SPI 104 MHz 16-SOP
|
Category
|
|
|
Mfr
|
|
|
Series
|
|
|
Product Status
|
Not For New Designs
|
|
DigiKey Programmable
|
Verified
|
|
Memory Type
|
Non-Volatile
|
| Package | Tube |
|
Memory Format
|
|
|
Technology
|
FLASH - NOR
|
|
Memory Size
|
|
|
Memory Organization
|
8M x 8
|
|
Memory Interface
|
SPI
|
|
Clock Frequency
|
104 MHz
|
|
Write Cycle Time - Word, Page
|
300µs, 5ms
|
|
Voltage - Supply
|
2.7V ~ 3.6V
|
|
Operating Temperature
|
-40°C ~ 85°C (TA)
|
|
Mounting Type
|
Surface Mount
|
|
Package / Case
|
|
|
Supplier Device Package
|
16-SOP
|
|
Base Product Number
|
Description:
Serial Peripheral Interface compatible - Mode 0 and Mode 3
●64Mb: 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two /0 mode)
structure or 16,777,216x 4 bits (four 10 mode) structure
●2048 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
●256 Equal Blocks with 32K bytes each
- Any Block can be erased individually
●128 Equal Blocks with 64K bytes each
- Any Block can be erased individually
●Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
●Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
●High Performance
VCC= 2.7~3.6V
- Normal read
- 50MHz
- Fast read (Normal Serial Mode)
.1 10: 104MHz with 8 dummy cycles
-2 l/O: 70MHz with 4 dummy cycles
- 4 IO: 70MHz with 6 dummy cycles
- Fast read (Double Transfer Rate Mode)
-1 1O: 50MHz with 6 dummy cycles
- 2 IO: 50MHz with 6 dummy cycles
-410: 50MHz with 8 dummy cycles
- Fast program time: 1.4ms(typ.) and 5ms(max. )/page (256- byte per page)
- Byte program time: 9us (typical)
Continuously Program mode (automatically increase address under word program mode)
. Fast erase time: 60ms (typ./sector (4K-byte per sector); 0.7s(typ.) /block (64K-byte per block); 50s(typ.) /chip
●Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Low standby current: 50uA (max.)
- Deep power down current: 20uA (max.)
Typical 100,000 erase/program cycles
20 years data retention
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Wisdtech Technology Co.,Limited
Location
Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
Contact Person
Tao