2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Price:
Email us for details
MOQ:
1pcs
Delivery Time:
1day
Brand:
Toshiba
Product Description
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole
| Toshiba | |
| Product Category: | Bipolar Transistors - BJT |
| RoHS: | Details |
| Through Hole | |
| TO-3P-3 | |
| NPN | |
| Single | |
| 230 V | |
| 230 V | |
| 5 V | |
| 400 mV | |
| 15 A | |
| 150 W | |
| 30 MHz | |
| - | |
| + 150 C | |
| 2SC | |
| Tray | |
| Brand: | Toshiba |
| Continuous Collector Current: | 15 A |
| DC Collector/Base Gain hfe Min: | 55 |
| DC Current Gain hFE Max: | 160 |
| Height: | 26 mm |
| Length: | 20.5 mm |
| Product Type: | BJTs - Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Width: | 5.2 mm |
| Unit Weight: | 0.239863 oz |
Power Amplifier Applications
• High breakdown voltage: VCEO = 230 V (min)
• Complementary to 2SA1943
• Suitable for use in 100-W high fidelity audio amplifier’s output stage
Specifications
- Manufacturer: Toshiba
- Transistor Type: NPN
- Package Type: TO-3PL
- Maximum Power Dissipation: 150W
- Collector Emitter Voltage (VCEO): 230V
- Maximum Collector Current: 15A
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Frequency: 30MHz
- Mounting Type: Through Hole
- Operating Temperature: 150°C TJ
- Part Status: Obsolete
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Wisdtech Technology Co.,Limited
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Contact Person
Tao