TS3USB221EDRCR USB Switch ICs Hi-Spd USB 2.0 1:2 Mux/DeMux Sw Integrated Circuits
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MOQ:
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Delivery Time:
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Brand:
Texas Instruments
Product Description
TS3USB221EDRCR USB Switch ICs Hi-Spd USB 2.0 1:2 Mux/DeMux Sw Integrated Circuits
| Texas Instruments | |
| Product Category: | USB Switch ICs |
| RoHS: | Details |
| USB 2.0 Multiplexers/Demultiplexers | |
| 2 x 1:2 | |
| 6 Ohms | |
| 30 ns | |
| 17 ns | |
| 2.3 V to 3.6 V | |
| - 40 C | |
| + 85 C | |
| SMD/SMT | |
| VSON-10 | |
| Reel | |
| Cut Tape | |
| MouseReel | |
| Bandwidth: | 1 GHz |
| Brand: | Texas Instruments |
| Development Kit: | TS3USB221EEVM |
| Moisture Sensitive: | Yes |
| Number of Switches: | 2 Switch |
| Operating Supply Current: | 30 uA |
| Product Type: | USB Switch ICs |
| Series: | TS3USB221E |
| Subcategory: | Switch ICs |
| Supply Voltage - Max: | 3.6 V |
| Supply Voltage - Min: | 2.3 V |
| Unit Weight: | 0.001386 oz |
Description
The TS3USB221E is a high-bandwidth switch specially designed for the switching of high-speed
USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras,
and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1 GHz) of this switch
allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs
from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers lttle or
no attenuation of the high-speed signals at the outputs. The TS3USB221E is designed for low bit-to-
bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as
high-speed USB 2.0 (480 Mbps).
The TS3USB221 E integrates ESD protection cells on all pins, is available in a SON package (3 mm x
3mm)aswellasinatinyμQFNpackage(2mm> 1.5 mm) and is characterized over the free-air temperature
range from - 40°C to 85°C.
Features
●Vcc operation of 2.3 V to 3.6 V
●Switch l/Os accept signals up to 5.5 V
●1.8-V compatible control-pin inputs
●Low-power mode when OE Is disabled (1 μA)
●ron= 6 Q maximum
●OroN = 0.2 Q typical
●Cio(on)=7 pF maximum
●Low power consumption (30 μA maximum)
●ESD performance tested per JESD 22
---7000-V human body model(A114-B, Class I)
一1000-V charged-device model (C101)
●ESD performance /O port to GND
---12-KV human body model (A114-B, Class I)
---+7- kV contact discharge (IEC 61000-4-2)
●High bandwidth (1 GHz typical)
Applications
●Routes signals for USB 1.0, 1.1, and 2.0
●Mobile phones
●Digital cameras
●Notebooks
●USB I/0 expansion
●MHL 1.0
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