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TS5N118DBQR Power Switch ICs - POE / LAN 1of8 Fet Mult/Demult High-BW Bus Sw

Price Negotiable
Price: Email us for details
MOQ: 1pcs
Delivery Time: 1day
Brand: Texas Instruments
Product Description

 

 

TS5N118DBQR Power Switch ICs - POE / LAN 1of8 Fet Mult/Demult High-BW Bus Sw

Texas Instruments
Product Category: Power Switch ICs - POE / LAN
RoHS: Details
12.5 Ohms
5 V
- 40 C
+ 85 C
SMD/SMT
SSOP-16
Reel
Brand: Texas Instruments
Moisture Sensitive: Yes
Product Type: Power Switch ICs - POE / LAN
Series: TS5N118
Subcategory: Switch ICs
Unit Weight: 0.002628 oz
 
Description
The TS5N118 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass
transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for
minimal propagation delay and supports rail-to-rail switching on the data input/output (/O) ports. The device also
features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.
Specifially designed to support high-bandwidth applications, the TS5N118 provides an optimized interface
solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The TS5N118 is a 1-0f-8 multiplexer/demutiplexer with a single output-enable (OE) input. The select (S0, S1,
S2) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is
enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is
high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using If The loff circuitry prevents damaging
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to Vcc through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

 

FEATURES
●Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron= 3 Q Typ)
●0- to 10-V Switching on Data /0 Ports Bidirectional Data Flow With Near-Zero Propagation Delay
Low Input/Output Capacitance Minimizes Loading and Signal Distortion (i0(OFF) = 20 pF Max, B Port)
Vcc Operating Range From 4.75 V to 5.25 V Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
●ESD Performance Tested Per JESD 22
---2000-V Human-Body Model (A114-B, Class I)
---1000-V Charged-Device Model (C101)
●Supports Both Digital and Analog Applications
 
 
APPLICATIONS
●PCI Interface
●Differential Signal Interface
●Memory Interleaving
Bus Isolation
●Low-Distortion Signal Gating

 

 

 

 

 

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