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TS5N214DBQR Digital Bus Switch ICs 2B 1of4 Fet Multipl/ Demult Hi-BW Bus Sw

Price Negotiable
Price: Email us for details
MOQ: 1pcs
Delivery Time: 1day
Brand: Texas Instruments
Product Description

 

 

TS5N214DBQR Digital Bus Switch ICs 2B 1of4 Fet Multipl/ Demult Hi-BW Bus Sw

Texas Instruments
Product Category: Digital Bus Switch ICs
RoHS: Details
2 bit
3 Ohms
3 ns
5 V
- 40 C
+ 85 C
SMD/SMT
SSOP-16
Reel
Brand: Texas Instruments
Moisture Sensitive: Yes
Product Type: Digital Bus Switch ICs
Series: TS5N214
Subcategory: Switch ICs
Unit Weight: 0.002628 oz
 
Description
The TS5N214 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass
transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for
minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also
features low data /O capacitance to minimize capacitive loading and signal distorion on the data bus. Specifically
designed to support high-bandwidth applications, the TS5N2 14 provides an optimized interface solution ideally
suited for broadband communications, networking, and data-intensive computing systems.
The TS5N214 is a 2-bit 1-of-4 multiplexer/demultiplexer with separate output-enable (1OE, 20E) inputs. The
select (S0, S1) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the
multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow
between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists
between the A and B ports.
This device is fully specified for partial-power-down applications using lff The lof circuitry prevents damaging
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to Voc through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

 

FEATURES
• Low and Flat ON-State Resistance (ron)Characteristics Over Operating Range(ron = 3 Ω Typ)
• 0- to 10-V Switching on Data I/O Ports• Bidirectional Data Flow With Near-ZeroPropagation Delay
• Low Input/Output Capacitance MinimizesLoading and Signal Distortion(Cio(OFF) = 20 pF Max, B Port)
• VCC Operating Range From 4.75 V to 5.25 V
• Latch-Up Performance Exceeds 100 mA PerJESD 78, Class II
• ESD Performance Tested Per JESD 22– 2000-V Human-Body Model(A114-B, Class II)– 1000-V
 Charged-Device Model (C101)
• Supports Both Digital and AnalogApplications: PCI Interface, Differential SignalInterface, Memory Interleaving,
  Bus Isolation,Low-Distortion Signal Gating
 

 

 

 

 

 

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