BSC020N03MSG N-Ch MOSFET IC 30V 100A TDSON-8 OptiMOS 3M N P Channel Mosfet

Price Negotiable

Price: Email us for details

MOQ: 1pcs

Delivery Time: 1day

Brand: Infineon

Product Description

BSC020N03MSG MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M

Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	60 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Series:	OptiMOS 3M
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	14 ns
Forward Transconductance - Min:	60 S
Height:	1.27 mm
Length:	5.9 mm
Product Type:	MOSFET
Rise Time:	14 ns
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	27 ns
Width:	5.15 mm
Unit Weight:	0.003880 oz

Description

The BSC020N03MSG is a power MOSFET component manufactured by Infineon Technologies AG .

It is part of the OptiMOS M-Series Power-MOSFET family. MOSFETs (Metal-Oxide-Semiconductor

Field-Effect Transistors) are widely used in power electronics for switching applications.

Features

•Optimizedfor5Vdriverapplication(Notebook,VGA,POL)

•LowFOMSWforHighFrequencySMPS

•100%Avalanchetested

•N-channel

•Verylowon-resistanceRDS(on)@VGS=4.5V

•ExcellentgatechargexRDS(on)product(FOM)

•QualifiedaccordingtoJEDEC1)fortargetapplications

•Superiorthermalresistance

•Pb-freeplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

Optimized for 5V driver applications such as notebooks, VGA, and POL (Point of Load)
Low FOMSW (Figure of Merit for Switching) for high-frequency SMPS (Switched-Mode Power Supplies)
100% avalanche tested for reliable performance
N-channel MOSFET
Very low on-resistance (RDS(on)) at VGS=4.5V
Excellent gate charge x RDS(on) product (FOM)
Qualified according to JEDEC standards for target applications
Package type: PG-TDSON-8
Superior thermal resistance for efficient heat dissipation
Pb-free plating and RoHS compliant [1].
Halogen-free according to IEC61249-2-21