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ISL6625ACRZ-T Half-Bridge Gate Driver IC Non-Inverting 8-DFN (2x2)

Price Negotiable
Price: Email us for details
MOQ: 1pcs
Delivery Time: 1day
Brand: Renesas Electronics
Product Description

ISL6625ACRZ-T Half-Bridge Gate Driver IC Non-Inverting 8-DFN (2x2)

Renesas Electronics
Product Category: Gate Drivers
RoHS: Details
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
2 Driver
2 Output
20 mA
5.5 V
13.2 V
31 ns
18 ns
0 C
+ 70 C
ISL6625A
Reel
Cut Tape
Brand: Renesas / Intersil
Height: 0.9 mm
Length: 2 mm
Moisture Sensitive: Yes
Product Type: Gate Drivers
Subcategory: PMIC - Power Management ICs
Technology: Si
Width: 2 mm
Unit Weight: 0.000388 oz

 

The ISL6625A is a high frequency MOSFET driver designed todrive upper and lower power N-Channel

MOSFETs in asynchronous rectified buck converter topology.In ISL6625A, the upper and lower gates are

both driven to anexternally applied voltage. This provides the capability tooptimize applications involving

trade-offs between gate chargeand conduction losses.An advanced adaptive shoot-through protection is

integrated toprevent both the upper and lower MOSFETs from conductingsimultaneously and to minimize

dead time. The ISL6625A hasa 10kΩ integrated high-side gate-to-source resistor to preventself turn-on due

to high input bus dV/dt.This driver also has an overvoltage protection feature, which isoperational while VCC

is below the POR threshold. The PHASEnode is connected to the gate of the low-side MOSFET (LGATE)via

a 30kΩ resistor, limiting the output voltage of the converterclose to the gate threshold of the low-side MOSFET.

This isdependent on the current being shunted, which provides someprotection to the load should the upper

MOSFET(s) becomeshorted.

 

Applications

• High light load efficiency voltage regulators

• Core regulators for advanced microprocessors

• High current DC/DC converters

 

Features

• Dual MOSFET drives for synchronous rectified bridge

• Advanced adaptive zero shoot-through protection- PHASE detection- LGATE detection- Auto-Zero of rDS(ON) conduction offset effect

• Low standby bias current

• 36V internal bootstrap switcher

• Bootstrap capacitor overcharging prevention

• Integrated high-side gate-to-source resistor to prevent fromself turn-on due to high input bus dV/dt

• Pre-POR overvoltage protection for start-up and shutdown

• Power rails undervoltage protection

• Expandable bottom copper pad for enhanced heat sinking

• Dual flat no-lead (DFN) package- Near chip-scale package footprint; improves PCBefficiency and thinner in profile• Pb-Free (RoHS compliant)



 

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Company Wisdtech Technology Co.,Limited
Location Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
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