DMN2058UW-7 N-Channel MOSFET 20V 3.5A 42mOhm SOT-323-3 Power Transistor
Price:
USD 0.01-20/piece
MOQ:
10
Delivery Time:
5-8 work days
Brand:
Diodes Incorporated
Product Description
DMN2058UW-7 N-Channel MOSFET Overview
High-performance N-Channel MOSFET from Diodes Incorporated, designed for efficient power management in SMD applications with 20V breakdown voltage and 3.5A continuous current rating.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Id) | 3.5 A |
| Drain-Source On Resistance (Rds On) | 42 mΩ |
| Gate-Source Threshold Voltage (Vgs th) | 400 mV |
| Gate Charge (Qg) | 7.7 nC |
| Power Dissipation (Pd) | 700 μW |
| Operating Temperature Range | -55°C to +150°C |
Performance Features
- Fast switching performance with 2ns turn-on delay
- Low gate charge of 7.7 nC for efficient operation
- Minimal on-resistance of 42 mΩ reduces power loss
- Single channel enhancement mode configuration
- SOT-323-3 package for space-constrained applications
Package & Delivery
Available in SOT-323-3 package with reel packaging option. Unit weight: 6 mg. Suitable for automated assembly processes.
Technical Documentation
Download DMN2058UW-7 Datasheet (PDF)
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe