SI2308BDS-T1-E3 N-Channel MOSFET 60V 2.3A 156mΩ SOT-23 TrenchFET Transistor
Price:
USD 0.01-20/piece
MOQ:
10
Delivery Time:
5-8 work days
Brand:
Vishay
Product Description
SI2308BDS-T1-E3 N-Channel MOSFET Overview
Vishay's SI2308BDS-T1-E3 is a high-performance N-Channel MOSFET featuring advanced TrenchFET technology in a compact SOT-23-3 package. This enhancement-mode transistor delivers reliable switching performance with 60V drain-source voltage capability and 2.3A continuous current rating.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 2.3A |
| Drain-Source On Resistance (Rds On) | 156 mΩ |
| Gate-Source Voltage (Vgs) | ±20V |
| Gate Threshold Voltage (Vgs th) | 1V |
| Power Dissipation (Pd) | 1.66W |
Technical Features
- TrenchFET Technology for enhanced efficiency and performance
- Single N-Channel Configuration with 1 channel design
- Fast Switching Performance with 10ns rise time and 7ns fall time
- Wide Temperature Range from -55°C to +150°C
- Low Gate Charge of 6.8nC for reduced drive requirements
- SMD/SMT Package for automated assembly processes
Packaging & Applications
Available in reel packaging with cut tape options, this MOSFET is ideal for power management, DC-DC converters, load switching, and various industrial applications requiring compact, efficient power handling.
Documentation
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe