MMDT2222A-7 NPN Bipolar Transistor 40V 600mA SOT-363-6 Package for Switching Applications
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
Diodes Incorporated
Product Description
Product Overview
The MMDT2222A-7 is a high-performance NPN bipolar junction transistor featuring dual configuration in a compact SOT-363-6 package. Designed for efficient switching and amplification applications with 40V collector-emitter voltage and 200mW power dissipation.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum Collector-Emitter Voltage | 40 V |
| Maximum DC Collector Current | 600 mA |
| Power Dissipation | 200 mW |
| Gain Bandwidth Product | 300 MHz |
| Operating Temperature Range | -55°C to +150°C |
| Package Dimensions | 2.2 mm × 1.35 mm × 1 mm |
Technical Features
- Dual NPN transistor configuration for space-efficient designs
- High current gain (hFE) up to 300 for superior amplification
- Low collector-emitter saturation voltage of 1V for efficient switching
- SMD/SMT installation compatible with automated assembly processes
- Compact SOT-363-6 package with minimal footprint
- Wide operating temperature range for industrial applications
Package & Documentation
Available in reel packaging for high-volume production. Complete technical documentation available for download.
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe