NP1100SCMCT3G Thyristor Surge Protection Device 130V 30A Low Capacitance TSPD DO-214AA-2 SMD Package
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
onsemi
Product Description
NP1100SCMCT3G Thyristor Surge Protection Device Overview
The NP1100SCMCT3G is a high-performance thyristor surge protection device (TSPD) from onsemi, designed to provide robust protection against electrical surges in sensitive electronic circuits. This SMD/SMT component features low capacitance characteristics ideal for high-frequency applications.
Technical Specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Turning Current (VBO) | 130 V |
| Maximum Turning Current (IBO) | 30 A |
| Non-Repetitive On-State Current | 30 A |
| Rated Repeated Closing State Voltage (VDRM) | 90 V |
| Off-State Leakage Current (IDRM) | 5 μA |
| Maximum Holding Current (Ih) | 150 mA |
| Open State Voltage | 4 V |
| Operating Temperature Range | -40°C to +150°C |
| Package Type | DO-214AA-2 (SMD/SMT) |
| Unit Weight | 180 mg |
Key Features
- Low capacitance design for minimal signal distortion in high-frequency circuits
- Wide operating temperature range from -40°C to +150°C for harsh environments
- Compact DO-214AA-2 SMD package for space-constrained applications
- Low leakage current (5 μA) for improved energy efficiency
- High surge current handling capability (30 A) for robust protection
Documentation
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe