BCP69T1G PNP Bipolar Transistor 1A 20V SOT-223-4 Package for High-Frequency Applications
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
onsemi
Product Description
Product Overview
The BCP69T1G is a high-performance PNP bipolar junction transistor (BJT) from onsemi, designed for SMD/SMT applications requiring reliable switching and amplification performance in compact electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum DC Collector Current | 1 A |
| Collector-Emitter Voltage (VCEO) | 20 V |
| Power Dissipation | 1.5 W |
| Gain Bandwidth Product (fT) | 60 MHz |
| Operating Temperature Range | -65°C to +150°C |
| Package Dimensions | 6.5 mm × 3.5 mm × 1.57 mm |
Technical Features
- PNP polarity with single configuration
- Low collector-emitter saturation voltage: 500 mV
- High DC current gain (hFE): 50
- SOT-223-4 package for space-constrained applications
- Reel packaging for automated assembly processes
- Silicon technology for reliable performance
Documentation
Complete technical specifications and application notes available in the datasheet:
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe