BCP69T1G PNP Bipolar Transistor SOT223 20V 2A 1.35W 140MHz BJT
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
Nexperia
Product Description
BCP69T1G PNP Bipolar Junction Transistor
Product Overview
High-performance PNP bipolar junction transistor in SOT-223 package, designed for medium-power applications requiring reliable switching and amplification performance.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | PNP |
| Maximum Collector Current | 2A |
| Collector-Emitter Voltage (VCEO) | 20V |
| Power Dissipation | 1.35W |
| DC Current Gain (hFE) | 160 at 500mA, 1V |
| Gain Bandwidth Product | 140MHz |
| Package Dimensions | 6.7mm × 3.7mm × 1.7mm |
Technical Features
- Silicon technology for reliable performance
- SMD/SMT installation compatible
- Single transistor configuration
- Low collector-emitter saturation voltage: 600mV
- Wide operating temperature range: -55°C to +150°C
- Compact SOT-223-3 package design
Package Information
Available in reel packaging with cut tape options. Unit weight: 112mg. Part number alias: 933969390115.
Documentation
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe