BC848BW-7-F NPN BJT Transistor 30V 100mA 300MHz SOT-323-3 SMD Package
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
Diodes Incorporated
Product Description
Product Overview
The BC848BW-7-F is a high-frequency NPN bipolar junction transistor from Diodes Incorporated, designed for applications requiring low saturation voltage and robust performance in compact SMD packaging.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum DC Collector Current | 100 mA |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector-Emitter Saturation Voltage | 200 mV |
| Gain Bandwidth Product (fT) | 300 MHz |
| Power Dissipation | 200 mW |
| Operating Temperature Range | -65°C to +150°C |
Technical Features
- NPN bipolar junction transistor with single configuration
- Compact SOT-323-3 surface-mount package
- High DC current gain (hFE min: 200)
- Low saturation voltage for improved efficiency
- Robust construction for reliable performance
- Dimensions: 2.2 mm length × 1.35 mm width × 1 mm height
- Unit weight: 5 mg for lightweight applications
Package & Documentation
Available in reel packaging with cut tape options. Complete technical documentation including datasheet is available for download.
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe