FDMC8854 N-Channel Power Trench MOSFET 30V 15A 5.7mΩ SMD Package
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
onsemi
Product Description
Product Overview
The FDMC8854 is a high-performance N-Channel Power Trench MOSFET from onsemi, delivering exceptional efficiency in power management applications. This surface-mount device features low on-resistance and fast switching capabilities ideal for modern electronic systems.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 15A |
| Drain-Source On Resistance | 5.7 mΩ |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 2W |
| Operating Temperature | -55°C to +150°C |
Performance Features
- Ultra-low 5.7 mΩ on-resistance for minimal power loss
- Fast switching with 5ns rise/fall times for high-frequency operation
- 41 nC gate charge for efficient drive requirements
- Enhanced mode operation with 1V gate threshold voltage
- Compact 3.3mm × 3.3mm × 0.8mm Power-33-8 package
- Single N-Channel configuration with 60S transconductance
Technical Documentation
Complete technical specifications and application notes available in the product datasheet:
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe