SI2306BDS-T1-GE3 N-Channel MOSFET 30V 3.16A 47mΩ Logic Level Power Transistor SOT-23-3 Package
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
Vishay
Product Description
SI2306BDS-T1-GE3 N-Channel MOSFET Overview
Vishay's SI2306BDS-T1-GE3 is a high-performance N-Channel logic level MOSFET featuring low on-resistance and fast switching capabilities, designed for efficient power management applications.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 30V |
| Continuous Drain Current (Id) | 3.16A |
| Drain-Source On-Resistance (Rds On) | 47mΩ |
| Power Dissipation (Pd) | 750mW |
| Gate-Source Threshold Voltage (Vgs th) | 3V |
| Operating Temperature Range | -55°C to +150°C |
Product Features
- TrenchFET technology for enhanced performance
- Logic level compatible (3V gate threshold)
- Fast switching speeds: 7ns turn-on, 14ns turn-off
- SMD/SMT package for automated assembly
- Low gate charge (3nC) for efficient driving
- Single N-Channel configuration
Package & Delivery
Available in SOT-23-3 package with reel packaging options including MouseReel encapsulation. Unit weight: 8mg.
Technical Documentation
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe