DSS20201L-7 NPN Bipolar Transistor SOT-23-3 20V 2A 150MHz BJT
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
Diodes Incorporated
Product Description
Product Overview
The DSS20201L-7 is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for surface-mount applications requiring reliable switching and amplification capabilities.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum Collector Current | 2 A |
| Collector-Emitter Voltage (VCEO) | 20 V |
| Power Dissipation | 600 mW |
| Gain Bandwidth Product | 150 MHz |
| DC Current Gain (hFE) | 200 |
| Operating Temperature Range | -55°C to +150°C |
Technical Features
- NPN polarity with single configuration
- SMD/SMT installation in compact SOT-23-3 package
- Low collector-emitter saturation voltage of 100 mV
- Compact dimensions: 2.9mm length × 1.3mm width × 1mm height
- Lightweight design at only 8 mg unit weight
Package Information
Available in reel packaging with cut tape and MouseReel encapsulation for automated assembly processes.
Documentation
Complete technical documentation available:
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe