DXT5401-13 PNP Bipolar Junction Transistor 1W 150V 600mA SOT-89-3 Package
Price:
USD 0.01-20/piece
MOQ:
1
Delivery Time:
5-8 work days
Brand:
Diodes Incorporated
Product Description
Product Overview
The DXT5401-13 is a high-performance PNP bipolar junction transistor designed for demanding industrial applications. Featuring a robust SOT-89-3 package and 1W power dissipation capability, this transistor delivers reliable performance in compact electronic designs.
Key Specifications
| Transistor Type | PNP Bipolar Junction Transistor (BJT) |
| Maximum Collector Current | 600 mA |
| Collector-Emitter Voltage | 150 V |
| Power Dissipation | 1 W |
| Gain Bandwidth Product | 300 MHz |
| Operating Temperature Range | -55°C to +150°C |
Technical Features
- Surface-mount SOT-89-3 package for space-constrained applications
- High voltage capability with 150V VCEO and 160V VCBO
- Low saturation voltage of 500 mV for improved efficiency
- Compact dimensions: 4.6mm × 2.6mm × 1.6mm
- Minimum DC current gain of 50 at 50 mA, 5V
Package & Manufacturing
Available Packaging: Reel, Cut Tape, MouseReel
Manufacturer: Diodes Incorporated
Product Series: DXT5401
Applications
Ideal for power management circuits, amplification stages, switching applications, and industrial control systems requiring reliable transistor performance in harsh environments.
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe