60W High Gain Wide Bandwidth Capability Frequency up to 4000MHz YP10401560T
60W High Gain Wide Bandwidth Capability Frequency up to 4000MHz SZHUASHI YP10401560T for High Frequency Applications
Description
Innotion’s YP10401560T is a 60-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange
package.
Features
High Efficiency and Linear Gain Operation,Negative Gate Voltage and Bias Sequencing Required Excellent Thermal Stability and Excellent Ruggedness,Metal Based Package Sealed with Ceramic-Epoxy Lid.Gold Metallization System: Chip-Wire Bond-Package.
| Pout | 60W |
| Working Voltage | 28V |
| Frequency | 4000MHz |
We are based in Jiangsu, China, start from 2010,sell to Western Europe(50.00%),Southern Europe(12.00%).
2. How can we guarantee quality?
Always a pre-production sample before mass production;
Always final Inspection before shipment;
1 year warranty for our products.
3.What can you buy from us?
Signal Booster, VCO, Anti Drone Jammer Module, Power Amplifier, Gain Block and so on
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.



