YP506012100T is a 100-watt, internally matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the YP506012100T ideal for 5000MHz~6000MHz, either Pulse or CW application. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. Because of internal configuration, it must be used as single ended device.

Features:

Suitable for wireless communication infrastructure, wideband amplifier, EMC testing, ISM etc.
High Reliability Metallization Process
Negative Gate Voltage and Bias Sequencing Required
Excellent Thermal Stability and Excellent Ruggedness
Thermally Enhanced Industry Standard Package
Metal Based Package Sealed with Ceramic-Epoxy Lid
Gold Metallization System: Chip-Wire Bond-Package