Zhongshi Zhihui Technology (suzhou) Co., Ltd.
                                                                                                           
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

Price Negotiable
Price: Prices are negotiable
MOQ: Negotiable
Delivery Time: 5-8work days
Brand: INNOTION
Product Description

 INNOTION YP01401650T 50W Gallium Nitride 28V DC-4GHz High Electron Mobility GAN RF Power Transistor

 

Product Description

Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package.

 

Votage 28V
Pout 50W
 
 
Features:
High Efficiency and Linear Gain Operation
Negative Gate Voltage and Bias Sequencing Required
Excellent Thermal Stability and Excellent Ruggedness
Metal Based Package Sealed with Ceramic-Epoxy Lid
Gold Metallization System: Chip-Wire Bond-Package
 
 
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Company Information

Suzhou Industrial Park. Founded in 2010. The only official shop! We sell our own products at the best price, such as WiFi amplifier, VCO, sweep signal source, wireless card group and other product lines;
Professional people do professional things. We have mastered some core technologies in the product field and have a number of independent intellectual property rights.
Our products have been sold to many domestic cities, but also very popular with many foreign customers, such as Russia, the United States, South Korea, Vietnam, Sweden and so on.

 

Our Services

We stand by our commitment to ensure first class customer service.

 

 

 

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Location Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province
Contact Person Zhou

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