High Electron Mobility Gallium Nitride 28V 15W RF Power Transistor YP601241T
Innotion's YP601241T is a 15-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a plastic SOT-89 package.
| Package | SOT-89 |
| Output Power | 15W |
| Operating Frequency | DC ~6GHz |
| Voltage | 28V |
- High Efficiency and Linear Gain Operation
- Negative Gate Voltage and Bias Sequencing Required
- Excellent Thermal Stability and Excellent Ruggedness
- Metal Based Package Sealed with Ceramic-Epoxy Lid
- Gold Metallization System: Chip-Wire Bond-Package
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