60W 6-8GHz 50Ω-match GaN 28V 60W Power Amplifier GaN High Electron Mobility Transistor
YPM60800860M is a 60-watt, 50 Ω-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities. This makes the YPM60800860M ideal for multiple applications with frequency from 6000MHz to 8000MHz.
- High efficiency design
- High gain performance
- Wide bandwidth capabilities
- 50 Ω impedance matching
| Parameter | Specification |
|---|---|
| Frequency Range | 6000-8000MHz |
| Average Output Power | 60W |
| Operating Voltage | 28V DC |
| Gain Flatness | ±1.5 dB |
| Storage Temperature | -55°C to +85°C |
| Efficiency | 25% |
Located in Suzhou Industrial Park and founded in 2010, we are the official manufacturer of these products. We specialize in manufacturing and selling our own product lines including WiFi amplifiers, VCOs, sweep signal sources, wireless card groups, and other RF components at competitive prices.
Our team of professionals has mastered core technologies in the RF product field and holds multiple independent intellectual property rights. Our products have been distributed to numerous domestic cities and are popular with international customers in countries including Russia, United States, South Korea, Vietnam, and Sweden.
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