Krunter Future Tech (Dongguan) Co., Ltd.
                                                                                                           
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KES650H12A8L-2M IGBT Module 1200V 650A with 2.2mΩ On-Resistance for High Power Density Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Brand: Krunter
Product Description
Product Overview

The KES650H12A8L-2M IGBT module delivers high-performance power conversion in a compact, lightweight design ideal for space-constrained industrial applications requiring efficient thermal management and reliable operation.

Key Features & Benefits
  • High power density with advanced Trench FS IGBT technology
  • Low VCE(sat) for improved efficiency and reduced power losses
  • Parallel operation enabled through symmetrical design and positive temperature coefficient
  • Low inductance design for enhanced switching performance
  • Integrated NTC temperature sensor for precise thermal monitoring
  • Isolated baseplate using DBC (Direct Bonded Copper) technology
  • Compact and robust construction with molded terminals for durability
Technical Specifications
Parameter KES400H12A8L-2M KES650H12A8L-2M
Breakdown Voltage (VBR) 1200V 1200V
Gate Threshold Voltage (VGS(th)) 3.2V 3.2V
Current Rating (ID) 400A 650A
On-Resistance (RDS(on)) 3.7mΩ 2.2mΩ
Zero Gate Voltage Drain Current (IDSS) 200uA 200uA
Junction Temperature (TJ) 175℃ 175℃
Thermal Resistance (Rth(JC)) 0.064 K/W 0.064 K/W
Total Power (Ptot) 2230W 3200W
Circuit Configuration 2 Pack 2 Pack
Package Type ECDUAL3 SiC MOSFET
Technology SiC MOSFET SiC MOSFET
Internal Circuit Diagram
Internal circuit diagram of KES650H12A8L-2M IGBT module showing electrical connections and component layout Additional technical diagram of KES650H12A8L-2M IGBT module illustrating package dimensions and terminal configuration
Performance Highlights

This 650A, 1200V IGBT module delivers exceptional 3200W power handling with low 2.2mΩ on-resistance, making it ideal for high-efficiency power conversion systems requiring compact form factors and reliable thermal performance up to 175℃ operating temperature.

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Krunter Future Tech (Dongguan) Co., Ltd.
Location RM 708, Building A, No.5 Keji No.2 Road, Songshan Lake, Dongguan, P.R.China
Contact Person Jack

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