KES650H12A8L-2M IGBT Module 1200V 650A with 2.2mΩ On-Resistance for High Power Density Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Brand:
Krunter
Product Description
Product Overview
The KES650H12A8L-2M IGBT module delivers high-performance power conversion in a compact, lightweight design ideal for space-constrained industrial applications requiring efficient thermal management and reliable operation.
Key Features & Benefits
- High power density with advanced Trench FS IGBT technology
- Low VCE(sat) for improved efficiency and reduced power losses
- Parallel operation enabled through symmetrical design and positive temperature coefficient
- Low inductance design for enhanced switching performance
- Integrated NTC temperature sensor for precise thermal monitoring
- Isolated baseplate using DBC (Direct Bonded Copper) technology
- Compact and robust construction with molded terminals for durability
Technical Specifications
| Parameter | KES400H12A8L-2M | KES650H12A8L-2M |
|---|---|---|
| Breakdown Voltage (VBR) | 1200V | 1200V |
| Gate Threshold Voltage (VGS(th)) | 3.2V | 3.2V |
| Current Rating (ID) | 400A | 650A |
| On-Resistance (RDS(on)) | 3.7mΩ | 2.2mΩ |
| Zero Gate Voltage Drain Current (IDSS) | 200uA | 200uA |
| Junction Temperature (TJ) | 175℃ | 175℃ |
| Thermal Resistance (Rth(JC)) | 0.064 K/W | 0.064 K/W |
| Total Power (Ptot) | 2230W | 3200W |
| Circuit Configuration | 2 Pack | 2 Pack |
| Package Type | ECDUAL3 | SiC MOSFET |
| Technology | SiC MOSFET | SiC MOSFET |
Internal Circuit Diagram
Performance Highlights
This 650A, 1200V IGBT module delivers exceptional 3200W power handling with low 2.2mΩ on-resistance, making it ideal for high-efficiency power conversion systems requiring compact form factors and reliable thermal performance up to 175℃ operating temperature.
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Get in Touch
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Company
Krunter Future Tech (Dongguan) Co., Ltd.
Location
RM 708, Building A, No.5 Keji No.2 Road, Songshan Lake, Dongguan, P.R.China
Contact Person
Jack