Shaanxi KeGu New Material Technology Co., Ltd
                                                                                                           
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High Thermal Conductivity Ceramic Substrates with Exceptional Bending Strength and Cost-Effective Alumina Substrates

Price Negotiable
Price: 200-500 yuan/kg
MOQ: Negotiable
Delivery Time: Negotiable
Brand: KEGU
Product Description
Advanced Ceramic Substrates: Alumina (Al₂O₃), Aluminum Nitride (AlN) & Silicon Nitride (Si₃N₄) for Electronics
Engineered ceramic substrates form the foundation of modern electronic systems. Alumina (Al₂O₃), Aluminum Nitride (AlN), and Silicon Nitride (Si₃N₄) offer unique combinations of thermal, mechanical, and electrical properties, making them indispensable across power electronics, RF/microwave, and LED applications.
Material Property Comparison
Property Al₂O₃ 96% Al₂O₃ 99.6% AlN Si₃N₄
Apparent Density (g/cm³) 3.7-3.8 3.8-3.9 3.3 3.5
Vickers Hardness (GPa) 16 21 11 15
Bending Strength (MPa) 500 400 320 750
Elastic Modulus (GPa) 340 350 320 300
Thermal Conductivity (W/m*K) 24 28 180 55
CTE (10⁻⁶/K) 6.8-8.0 6.8-8.5 4.7-5.6 2.7
Dielectric Strength (kV/mm) 15 10 16 36
Volume Resistivity (Ω*m) >10¹² >10¹² >10¹² >10¹²
Dielectric Constant 9.8 9.9 8.9 8.5
Material Selection Guide
1. Alumina (Al₂O₃) Substrates - The Cost-Effective Standard
Alumina provides the optimal balance of performance and affordability, making it the most widely used ceramic substrate material.
  • Key Advantages:
    • Excellent cost-to-performance ratio
    • High mechanical strength and electrical insulation
    • Good thermal stability and chemical resistance
  • Typical Applications:
    • Standard thick-film and thin-film circuits
    • Heater elements, sensors, and resistor bases
    • RF shielding and general-purpose insulating components
  • Customization: Available in 96% to 99.7% purity; thickness from 0.25mm; surfaces from ground to polished; full metallization and complex shaping capabilities.
2. Aluminum Nitride (AlN) Substrates - High Thermal Performance
Aluminum Nitride is the premier choice for thermal management in high-power density applications, offering thermal conductivity rivaling beryllium oxide without associated toxicity concerns.
  • Key Advantages:
    • Very high thermal conductivity (180 W/m*K)
    • Excellent electrical insulation properties
    • Low coefficient of thermal expansion matching silicon
  • Critical Applications:
    • High-power LED arrays and laser diode carriers
    • Insulated Gate Bipolar Transistor (IGBT) modules
    • Microwave integrated circuits and high-frequency packages
  • Processing: Compatible with thick-film and thin-film metallization; available with polished surfaces for fine-line patterning.
3. Silicon Nitride (Si₃N₄) Substrates - Extreme Mechanical Reliability
Silicon Nitride excels in applications demanding exceptional fracture resistance, thermal shock survival, and long-term mechanical stability under harsh conditions.
  • Key Advantages:
    • Exceptional bending strength (750 MPa)
    • Superior resistance to thermal shock
    • Outstanding fracture toughness and wear resistance
  • Demanding Applications:
    • Automotive and aerospace power modules
    • Components for deep vacuum and high-vibration environments
    • Ultra-thin substrates (down to 0.3mm) requiring high structural integrity
Find the Right Substrate for Your Application
  • Prioritizing Thermal Management? → Select Aluminum Nitride (AlN)
  • Balancing Performance and Budget? → Choose Alumina (Al₂O₃)
  • Requiring Maximum Mechanical Durability? → Specify Silicon Nitride (Si₃N₄)
Need technical consultation? Our engineering team can help you select the ideal ceramic substrate material and processing options for your specific electronic circuit, thermal management, or high-reliability application.
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Company Shaanxi KeGu New Material Technology Co., Ltd
Location 5# Chaoyang Road,Weicheng Sub-district,Qinhan New City, Xixian New Area, Xi'an Shaanxi Province,China,712039
Contact Person Yuki

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