Wuhan Precise Instrument Co., Ltd.
                                                                                                           
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10Hz-1MHz Semiconductor Device C-V Testing System

Price Negotiable
Price: Negotiable
MOQ: 1 unit
Delivery Time: 2-8 weeks
Brand: PRECISE INSTRUMENT
Product Description

10Hz-1MHz Semiconductor Device C-V Testing System

      Capacitance-Voltage (C-V) Measurement is widely used to characterize semiconductor parameters, particularly in MOS capacitors (MOS CAPs) and MOSFET structures. The capacitance of a metal-oxide-semiconductor (MOS) structure is a function of the applied voltage. The curve depicting capacitance variation with voltage is termed the C-V curve (or C-V characteristics). This measurement enables precise determination of critical parameters, including:

· Oxide layer thickness (dox)

· Substrate doping concentration (Nn)

· Mobile charge density in the oxide (Q1)

· Fixed oxide charge density (Qfc).

 

Product Features

▪ Wide Frequency Range: 10 Hz–1 MHz with continuously adjustable frequency points.

▪ High Precision & Broad Dynamic Range: 0 V–3500 V bias range with 0.1% accuracy.

Built-in CV Testing: Integrated automated CV testing software supports multiple functions, including C-V (capacitance-voltage), C-T (capacitance-time), and C-F (capacitance-frequency).

▪ IV Testing Compatibility: Simultaneously measures breakdown characteristics and leakage current behavior.

▪ Real-Time Curve Plotting: Intuitive software interface visualizes test data and curves for real-time monitoring.

▪ High Scalability: Modular system design enables flexible configuration based on testing needs.


Product Parameters

Items

Parameters

Test Frequency

10Hz-1MHz

Frequency Output Accuracy

±0.01%

Basic Accuracy

±0.5%

AC Test Signal Level

10mV~2Vrms (1m Vrms Resolution)

DC Test Signal Level

10mV~2V (1m Vrms Resolution度)

Output Impedance

100Ω

Capacitance Test Range

0.01pF – 9.9999F

VGS Bias Range

0 - ±30V(Optional )

VDS Bias Range

300V~1200V

Test Parameters

DIODE:CJ,IR,VR

MOSFET:Ciss,Coss,Crss,Rg,IDSS,IGSS,BVDSS

IGBT:Cies,Coes,Cres,ICES,IGES,VBRCES

Interface

RS232,LAN

 Programming Protocol

SCPI,LabView

 

Applications

▪  Nanomaterials: Resistivity, Carrier Mobility, Carrier Concentration, Hall Voltage

Flexible Materials:Tensile/Torsional/Bending Test, Voltage-Time (V-t), Current-Time (I-t), Resistance-Time (R-t), Resistivity, Sensitivity,Junciton Capacity.

▪  Discrete Devices:BVDSS,IGSS,IDSS,Vgs(th),Ciss/Coss/Crss (Input/Output/Reverse).

▪  Photodetectors: Dark Current (ID), Junction Capacitance (Ct), Reverse Breakdown Voltage (VBR), Responsivity (R).

▪  Perovskite Solar Cells:Open-Circuit Voltage (VOC), Short-Circuit Current (ISC),Maximum Power (Pmax), Max Power Voltage (Vmax), Max Power Current (Imax),Fill Factor (FF), Efficiency (η), Series Resistance (Rs), Shunt Resistance (Rsh),Junction Capacity.

LEDs/OLEDs/QLED:,Forward Voltage (VF),Threshold Current (Ith), Reverse Voltage (VR), Reverse Current (IR),Juntion Capacity.



Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Wuhan Precise Instrument Co., Ltd.
Location 4th Floor,Bd 6,No.6 Bonded Logistics Park,No. 777 Guanggu 3rd Road,Donghu New Technology Development Zone,Wuhan,China.
Contact Person Precise SMU

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