silicon capacitor launchip LHC204SA2K0047SWAX featuring silicon dioxide and silicon nitride dielectric materials
Product Overview
Silicon capacitors are fabricated using semiconductor chip manufacturing processes with silicon as the substrate and thin film materials like silicon dioxide/silicon nitride as the dielectric. Compared to ceramic capacitors (MLCC), they offer advantages such as small size, thin profile, low impedance, high frequency with low insertion loss, high temperature stability, and high reliability. Silicon capacitors are commonly used for DC isolation, RF bypassing, or as fixed capacitive tuning elements in filters, oscillators, and matching networks. They find broad applications in aerospace, defense, energy, communications, automation, and medical fields. Shanghai Langxi Technology Co., Ltd., headquartered in Anting Town, Jiading District, Shanghai, is committed to becoming a leading high-tech enterprise in high-end electronic components. Anting serves as their R&D, testing, and certification center, boasting independent laboratories with advanced equipment and an experienced R&D team, offering a variety of silicon capacitor series products in both surface mount and top/bottom electrode types.
Product Attributes
- Brand: (Shanghai Langxi Technology Co., Ltd.)
- Origin: Shanghai, China
- Material: Silicon substrate, Silicon dioxide/Silicon nitride dielectric
- Electrode Material: Surface gold electrode (for gold wire bonding), Ni/Au, Ni/SnAgCu (SAC305), Cu, Al, NiPdAu
- Certifications: Not specified in the provided text.
- Color: Not specified in the provided text.
Technical Specifications
| Product Series | Capacitance Range | Working Voltage (V) | Dielectric Strength (V) | Max Operating Frequency | Operating Temperature (C) | Mounting Type | Key Features/Target Models | Typical Thickness (m) |
| High Capacitance (HC) | 0.2nF~1F | 0.7~10 | 4~30 | 6GHz | -55~150 | Surface Mount | Capacitance density 2F/mm, world-leading; 01005L~0402L series | 100 |
| High Frequency (HF) | 0.8pF~1nF | 100 | 250 | 26.5GHz | -55~150 | Top/Bottom Electrode | Targeting Skyworks SC*/Murata UW* series; Silicon capacitor thickness 100m | 100 |
| Ultra-High Frequency (SF/XF) | 10nF~130nF | 2.5~10 | 11~30 | 67GHz | -55~150 | Surface Mount | Targeting Murata XBSC series; 0201/0201L/0402L series | 100 |
| High Voltage (HV/EV) | 15pF~1000pF | 150~3600 | 375~9000 | 26.5GHz | -55~150 | Top/Bottom Electrode | Targeting ATC100A/B/C/E series | 100 (typical), up to 300 for some models |
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