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MSTM MST8011AI-72-33E8.000000 Programmable Oscillator with 4.2 mA Typical and High Shock Resistance

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Product Description

MST8011 Low Power Programmable Oscillator

The MST8011 is a low-power, programmable oscillator offering precise frequency generation from 1 MHz to 156.25 MHz with 1Hz accuracy. It is 100% pin-compatible with and a direct replacement for quartz oscillators, providing excellent total frequency stability down to 20 ppm. With low power consumption of 4.2 mA (typical) at 1.8V, a wide VDD supply range (1.62V to 3.63V), and high shock and vibration resistance, the MST8011 is ideal for demanding applications. It features a standby mode for extended battery life, a fast 5 ms startup time, and LVCMOS/HCMOS compatible outputs. Available in industry-standard packages (2.0x1.6, 2.5x2.0, 3.2x2.5 mm), it meets RoHS, REACH, Pb-free, and Halogen-free specifications.

Product Attributes

  • Brand: MST Microelectronics (Shenzhen) Co., Ltd.
  • Origin: Shenzhen
  • Certifications: RoHS, REACH, Pb-free, Halogen-free

Technical Specifications

ParameterSymbolMinTypicalMaxUnitConditions
Frequency Characteristics
Output Frequency RangeF1-156.25MHz
Frequency StabilityF_stab-20-20ppmIncludes initial tolerance at 25C, first year aging at 25C, and variations in operating temperature, nominal supply voltage, and load. (Also specified as 25 ppm, 30 ppm, 50 ppm)
Operating Temperature RangeT_use-20-70Commercial Grade
-40-85Industrial Grade
-40-105Extended Industrial Grade
-55-125Automotive Grade
RMS Period JitterT_jitt-2.2-psF = 75 MHz, VDD = 2.5V, 2.8V, 3.0V or 3.3V
-2.8-psF = 75 MHz, VDD = 1.8V
Peak-to-peak Period JitterT_pk-23.3-psF = 75 MHz, VDD = 2.5V, 2.8V, 3.0V or 3.3V
-28.5-psF = 75 MHz, VDD = 1.8V
RMS Random JitterT_phj-0.5-psF= 75 MHz, Integration Bandwidth = 900 kHz to 7.5 MHz
-1.32psF = 75 MHz, Integration Bandwidth = 12 kHz to 20 MHz
Power Supply Characteristics
Power Supply VoltageVDD_1.81.621.81.98V
VDD_2.52.252.52.75V
VDD_2.82.522.83.08V
VDD_3.02.73.03.3V
VDD_3.32.973.33.63V
VDD_XX2.25-3.63V
VDD_YY1.62-3.63V
Current ConsumptionIdd-4.24.9mANo Load, F = 20 MHz, VDD = 1.8V (Typical 4.2mA)
-4.5-mANo Load, F = 20 MHz, VDD = 2.5V
-4.54.9mANo Load, F = 20 MHz, VDD = 2.8V to 3.3V
OE Disabled CurrentI_OD-4.54.8mAVDD = 1.8V, OE = GND, High-Z Output
-4.54.8mAVDD = 2.5V to 3.3V, OE = GND, High-Z Output
Standby CurrentI_std-0.61.5AST = GND, VDD = 1.8V, Output Weak Pull-down
-0.8-AST = GND, VDD = 2.5V, Output Weak Pull-down
-0.81.5AST = GND, VDD = 2.8V to 3.3V, Output Weak Pull-down
Output Characteristics
Duty CycleDC455055%Full Voltage Range
Output Low VoltageVOL--VDD0.1VIOL = 2 mA (VDD_1.8)
--VDD0.1VIOL = 3 mA (VDD_2.5 and VDD_2.8)
--VDD0.1VIOL = 4 mA (VDD_3.0 and VDD_3.3)
Output High VoltageVOHVDD0.9--VIOL = -2 mA (VDD_1.8)
VDD0.9--VIOL = -3 mA (VDD_2.5 and VDD_2.8)
VDD0.9--VIOL = -4 mA (VDD_3.0 and VDD_3.3)
Rise and Fall TimeTr, Tf-1.7-nsVDD = 2.5V, 2.8V, 3.0V or 3.3V, 20% to 80%
-1.9-nsVDD = 2.25V to 3.63V, 20% to 80%
-2.2-nsVDD =1.8V, 20% to 80%
Control and Timing Characteristics
Input Low VoltageVIL--VDD0.3VPin 1, OE or ST
Input High VoltageVIHVDD0.7--VPin 1, OE or ST
Startup TimeT_start-5.0-msMeasured from the time VDD reaches its rated minimum
OE Enable/Disable TimeT_oe-100130nsF= 180 MHz. Other frequencies, Toe = 100 ns + 3cycles
Resume TimeT_resume-5.0-msMeasured from ST pin exceeding 50% threshold
Environmental and Reliability
Shock Resistance-->60,000gMIL-STD-883F, Method 2002
Vibration Resistance-->70gMIL-STD-883F, Method 2007
G-Sensitivity--ppb/g
Moisture Sensitivity LevelMSL--MSL1@ 260CJESD22, Method A104

Applications

DVR, IP High Definition Cameras, Tablet PCs, Solid State Drives, Data Centers, Servers, PLCs, Industrial Controls, Power Equipment, New Energy, Medical Equipment, etc.


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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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