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Compact FOJAN FRC0603F22R0TS thick film chip resistor suitable for communication power supply and measuring instruments

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

FRC-Series Thick Film Chip Resistor

The FRC-Series Thick Film Chip Resistor is a compact and lightweight component designed for high reliability and quality. It is suitable for a wide range of applications including entertainment systems, appliances, computers, communication equipment, power supplies, illumination, and measuring instruments.

Product Attributes

  • Brand: FOJAN
  • Product Type: Thick Film Chip Resistor
  • Material: Ceramic substrate (Al2O3), Conductive layer (Ag), Resistive layer (RuO2+ glass), Outer Protective layer (Epoxy)

Technical Specifications

Type Rated Power (at 70) Max. Working Voltage (RCWV) Max. Overload Voltage Resistance Range T.C.R. (PPM/) Dimensions (L x W x H) Rated Current of Jumper Max Current of Jumper
0201 1/20W 25V 50V 1~10, 10~10M 400 (1~10), 200 (10~10M) 0.600.03 x 0.300.03 x 0.230.03 mm 0.5A 1A
0402 1/16W 50V 100V 1~10, 10~22M 200 (1~10), 100 (10~22M) 1.000.05 x 0.500.05 x 0.350.05 mm 1A 2A
0603 1/10W 75V 150V 1~10, 10~22M 200 (1~10), 100 (10~22M) 1.600.10 x 0.800.10 x 0.450.10 mm 1A 2A
0805 1/8W 150V 300V 1~10, 10~22M 200 (1~10), 100 (10~22M) 2.000.10 x 1.250.10 x 0.500.10 mm 2A 5A
1206 1/4W 200V 400V 1~10, 10~22M 200 (1~10), 100 (10~22M) 3.100.10 x 1.600.10 x 0.550.10 mm 2A 10A
1210 1/2W 200V 400V 1~10, 10~22M 200 (1~10), 100 (10~22M) 3.100.10 x 2.500.15 x 0.550.10 mm 2A 10A
1218 1W 200V 500V 1~10, 10~1M 200 (1~10), 100 (10~1M) 3.100.10 x 4.600.10 x 0.550.10 mm 6A 10A
1812 3/4W 200V 400V 1~10, 10~10M 200 (1~10), 100 (10~10M) 4.500.20 x 3.100.20 x 0.550.10 mm 2A 10A
2010 3/4W 200V 400V 1~10, 10~22M 200 (1~10), 100 (10~22M) 5.000.10 x 2.500.15 x 0.550.10 mm 2A 10A
2512 1W 200V 400V 1~10, 10~22M 200 (1~10), 100 (10~22M) 6.350.10 x 3.100.15 x 0.550.10 mm 2A 10A

Performance Specifications

Item Test Method Test Condition Specification
Temperature Coefficient JIS C 5201 4.8 / IEC60115-1-4.8 TCR=R-R0 /t-t0R0 106ppm R0: resistance at room temperature R: resistance at 125or -55 t0: room temperature t: test temperature 125or -55 As SPEC
Short-time overload JIS C 5201 4.13 / IEC60115-1-4.13 Applied 2.5 times of rated voltage for 5 second. Measure the variation of resistance. 0.5%, 1%: (1.0%+0.05)
5%: (2.0%+0.05)
Solderability JIS C 5201 4.17 / IEC60115-1-4.17 Dip the terminal in a flux and then dip into a soldering bath at 2455for 3 0.5sec. 95% coverage
Resist to soldering heat JIS C 5201 4.18 / IEC 60115-1-4.18 Dip the terminal in a flux and then dip into a soldering bath at 2605for 10 0.5sec. Measure the variation of resistance. (1.00% +0.05)
Insulation resistance JIS C 5201 4.6 / IEC60115-1-4.6 Applied the dielectric withstanding voltage on the center of body for 60 5seconds. Then measure insulation resistance. >10G
Dielectric withstanding voltage JIS C 5201 4.7 / IEC60115-1-4.7 Applied the dielectric withstanding voltage on the center of body for 60 5seconds. No evidence of flashover, arcing or insulation breakdown
Terminal bending JIS C 5201 4.33 / IEC60115-1-4.33 Specimen shall be mounted on test board, then bend the board and maintained for 20 1s. the distance of bending is 5+0.2/0 mm for resistors which size no larger than 1206 or 2+0.2/0 mm which size larger than 1206. Measure the variation of resistance. (1.00% +0.05)
Rapid temperature changes JIS C 5201 4.19 / IEC60115-1-4.19 Put specimen in a chamber which temperature can be T1-553T2 1553/1253, 30minrepeated 300 cycles. Measure the variation of resistance. 0.5%, 1%: (1.0%+0.05)
5%: (2.0%+0.05)
Humidity JIS C 5201 4.24 / IEC60115-1-4.24 Put specimen in a constant temperature and humidity chamber, temperature 402, humidity 90~95 %RH; apply rated voltage for 1.5 hours, then power off for 0.5 hours; repeat power on/off until test time reaches 1000 +48/-0 hours. Measure the variation of resistance. (Data truncated in source)

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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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