LanTu Micro STC303020 1R0MT magnetic shielding T core molding structure power inductors for low AC losses
T-core Molding Structure Power Inductors
Product Overview
The STC303020 series T-core molding structure power inductors from SHENZHEN LANTU MICRO ELECTRIC TECHNOLOGY CO., LTD. are designed for high-density installation and offer a thin profile with low DC resistance and ultra-high current capabilities. Featuring magnetic shielding for strong anti-electromagnetic interference, these inductors provide high reliability and excellent vibration resistance due to their T-core molding structure. They are ideal for applications requiring extremely low DCR and ultra-low AC losses at high switching frequencies. These inductors comply with RoHS, Halogen Free, and REACH standards.
Product Attributes
- Brand: LANTU MICRO ELECTRIC TECHNOLOGY
- Origin: SHENZHEN, CHINA
- Certifications: RoHS, Halogen Free, REACH Compliance
- Structure: T-core molding structure
- Shielding: Magnetic shielding type
Applications
- DC/DC converters for CPU in Notebook PCs
- Mobile phones, tablets, HDDs, DVCs, PDAs, 5G modules
- Servers, base stations
- Various DC-DC conversion power modules
Environmental Data
- Operating Temperature: -40 to +125 (including coil self-temperature rise)
Technical Specifications
Product Identification
STC 303020 1R0 M T
- Type: STC (T-CORE molding Structure Power Inductors)
- Inductance: 1.0 uH
- External Dimensions (LWH): 303020 (3.03.02.0 mm)
- Inductance Tolerance: J:5%, K: 10%, L: 15%, M: 20%, P: 25%, N: 30%
- Packing: B (Bulk Package), T (Tape & Reel)
Specifications
| Part No. | Inductance (H) | Tol. | DCR (m) Typ | DCR (m) Max | Saturation Current (A) Typ | Saturation Current (A) Max | Heat Rating Current (A) Typ | Heat Rating Current (A) Max |
|---|---|---|---|---|---|---|---|---|
| STC303020-1R0M | 1.0 | 20% | 14 | 20 | 8.0 | 7.3 | 6.5 | 6.0 |
| STC303020-1R5M | 1.5 | 20% | 19 | 25 | 7.0 | 6.5 | 6.3 | 5.8 |
| STC201612-2R2M | 2.2 | 20% | 37 | 45 | 6.0 | 5.5 | 4.7 | 4.3 |
| STC201612-3R3M | 3.3 | 20% | 52 | 63 | 5.9 | 5.4 | 4.5 | 4.0 |
| STC201612-4R7M | 4.7 | 20% | 60 | 73 | 4.8 | 4.0 | 4.2 | 3.8 |
| STC201612-6R8M | 6.8 | 20% | 107 | 135 | 4.5 | 3.8 | 3.2 | 3.0 |
| STC201612-100M | 10 | 20% | 135 | 160 | 3.8 | 3.3 | 2.5 | 2.2 |
Definitions:
- Saturation Current: DC current at which inductance drops 30% from its value without current.
- Heat Rating Current: The actual value of DC current when the temperature rise is T 40 (Ta=25).
- Rated DC Current: The lesser value of Isat or Irms.
- Note: Circuit design, component, PCB trace size and thickness, airflow, and other cooling provisions all affect the part temperature. Part temperature should be verified in the end application.
Shape and Dimensions
| Part No. | A (mm) | B (mm) | C (mm) | D (mm) | E (mm) | F (mm) | H (mm) |
|---|---|---|---|---|---|---|---|
| STC303020 | 3.00.1 | 3.00.1 | 2.0Max | 1.00.2 | 3.0Typ | 0.8Typ | 3.0Typ |
(Dimensions are in mm)
Reliability Testing
Terminal Strength: Meets specified force and duration requirements for SMT and DIP terminals without loose connections.
Resistance to Flexure: No visible mechanical damage after applying flexure of 2mm at 0.5mm/sec for 30 sec.
Dropping: No case deformation, change in appearance, short, or open circuit after dropping packaged products from 1m height.
Solderability: Wetting shall exceed 75% coverage, terminals must have 95% minimum solder coverage after immersion in solder at 2402 for 3 sec.
Vibration: No visible mechanical damage, inductance change within 10%, Q factor change within 20% after vibration testing.
Thermal Shock: No visible mechanical damage, inductance change within 10% (Mn-Zn: 30%), Q factor change within 20% after 100 cycles of thermal shock (-55~40 to 85~125).
Low Temperature Storage: No visible mechanical damage, inductance change within 10% (Mn-Zn: 30%), Q factor change within 20% after 962 hours at -55~-402.
High Temperature Storage: No visible mechanical damage, inductance change within 10% (Mn-Zn: 30%), Q factor change within 20% after 962 hours at 85~1252.
Damp Heat (Steady States): No visible mechanical damage, inductance change within 10% (Mn-Zn: 30%), Q factor change within 20% after 962 hours at 602 and 90% to 95% RH.
Heat endurance of Reflow soldering: No significant defects in appearance, L/L10% (Mn-Zn: L/L30%), Q/Q30% (SMD series only), DCR/DCR10% after reflow soldering twice with peak temperature 260+0/-5.
Resistance to solvent test: No case deformation, change in appearance, or obliteration of marking after dipping in IPA solvent and brushing.
Overload test: No smoke, peculiar smell, or fire during test; characteristics normal after test (applied twice rated current for 5 minutes).
Voltage resistance test: No breakdown during test; characteristics normal after test (DC1000V, Current: 1mA, Time: 1Min).
Recommended Reflow Soldering Curve
The recommended reflow conditions are provided as a guideline. Users should adjust and confirm according to their specific environment, equipment, and process conditions.
Reminders for Using These Products
- Storage: Within 12 months under conditions of 5~40C and 35~65% RH. Solderability may deteriorate beyond this period.
- Environment: Avoid use or storage in corrosive gas environments (salt, acid, alkali, etc.).
- Handling: Avoid direct contact with terminals by bare hands due to oil secretions. Handle products carefully to prevent damage from dropping or improper removal. Do not bend terminals excessively.
- Cleaning: Do not rinse coils. Contact the manufacturer if cleaning is necessary.
- Magnetism: Do not expose products to magnets or magnetic fields.
- Preheating: Preheat components before soldering. The temperature difference between solder and chip should not exceed 150C.
- Soldering Corrections: Perform corrections within specified conditions. Overheating may cause short circuits, performance degradation, or reduced lifespan.
- Thermal Design: Account for self-heating when power is on; ensure sufficient thermal design margins.
- Non-Magnetic Shield Type: Carefully lay out coils on the circuit board to prevent malfunctions due to magnetic interference.
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