China Silicon MEMS Oscillator MICROCHIP DSC1001DE2-012.0000 Suitable for Rugged and Portable Electronics for sale

Silicon MEMS Oscillator MICROCHIP DSC1001DE2-012.0000 Suitable for Rugged and Portable Electronics

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Product Description

Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides enhanced reliability, making it suitable for rugged, industrial, and portable applications. Available in industry-standard packages, it serves as a pin-for-pin replacement for standard crystal oscillators.

Product Attributes

Brand: Microchip Technology Inc.
Material: Silicon MEMS
Certifications: Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Units	Conditions
Frequency Range	F0	1		150	MHz	Single Frequency
	f			10	ppm	Frequency Tolerance (Initial, Temp, Voltage)
	f			20	ppm	Frequency Tolerance (Initial, Temp, Voltage)
	f			25	ppm	Frequency Tolerance (Initial, Temp, Voltage)
Aging	f			5	ppm	1 year @ +25C
Operating Voltage	VDD	1.7		3.6	V	Recommended Operating Conditions
	VDD	1.8		3.3	V	Electrical Characteristics
	VIN	-0.3		VDD + 0.3	V	Absolute Maximum Ratings
Operating Temperature Range	TA	-40		105	C	Ordering Option L
	TA	-40		85	C	Ordering Option I
	TA	-20		70	C	Ordering Option E
Supply Current, Standby	IDD			15	A	Max., T = +25C
Supply Current, Standby	IDD		6.0	6.5	mA	Operating (1 MHz), VDD=3.3V, CL=0pF, RL=, T=+25C
Output Load	ZL			R > 10 k, C 15 pF		Recommended Operating Conditions
	CL		15		pF	DSC1001
	CL		25		pF	DSC1003
	CL		40		pF	DSC1004
Output Startup Time	tSU		1.0	1.3	ms	T = +25C
Output Disable Time	tDA		20	100	ns
Output Duty Cycle	SYM	45		55	%
Input Logic Level High	VIH	0.75 x VDD			V
Input Logic Level Low	VIL			0.25 x VDD	V	VDD = 1.8V
Output Logic Level High	VOH	0.8 x VDD			V	DSC1004, CL=40pF, -6mA
	VOH	0.8 x VDD			V	DSC1003, CL=25pF, -6mA
	VOH	0.8 x VDD			V	DSC1001, CL=15pF, -4mA
Output Logic Level Low	VOL			0.2 x VDD	V	DSC1004, CL=40pF, 6mA
	VOL			0.2 x VDD	V	DSC1003, CL=25pF, 6mA
	VOL			0.2 x VDD	V	DSC1001, CL=15pF, 4mA
Output Transition Rise Time	tR		1.4	3.0	ns	DSC1001, CL=15pF, T=+25C
	tR		1.5	3.0	ns	DSC1003, CL=25pF, T=+25C
	tR		1.8	3.0	ns	DSC1004, CL=40pF, T=+25C
Output Transition Fall Time	tF		1.0	3.0	ns	DSC1001, CL=15pF, T=+25C
	tF		1.1	3.0	ns	DSC1003, CL=25pF, T=+25C
	tF		1.2	3.0	ns	DSC1004, CL=40pF, T=+25C
Jitter, Max. Cycle-to-Cycle	JCC		60		ps	f=100 MHz
Period Jitter	JP		10	15	psRMS	f=100 MHz
ESD Protection			4 kV HBM, 200V MM, 1.5 kV CDM
Junction Operating Temperature	TJ			+150	C
Storage Temperature Range	TA	-55		+150	C
Soldering Temperature Range	TS			+260	C	40 sec. max