China High Reliability Silicon MEMS Oscillator MICROCHIP DSC1001DI1-0080000T CMOS Technology Rugged Design for sale

High Reliability Silicon MEMS Oscillator MICROCHIP DSC1001DI1-0080000T CMOS Technology Rugged Design

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Product Description

Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides high reliability, making it suitable for rugged, industrial, and portable applications. Available in industry-standard packages, it offers a pin-for-pin "drop-in" replacement for standard crystal oscillators, enabling longer battery life and reduced power consumption in a compact, cost-effective package.

Product Attributes

Brand: Microchip Technology Inc.
Material: Silicon MEMS
Certifications: Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Units	Conditions
Frequency Range	F0	1		150	MHz	Single Frequency
	f			10	ppm	Frequency Tolerance (Includes initial tolerance, temperature, and power supply voltage)
	f			20	ppm	Frequency Tolerance
	f			25	ppm	Frequency Tolerance
Aging	f			50	ppm	1 year @ +25C
Operating Voltage	VDD	1.7		3.6	V	Recommended Operating Conditions
	VDD	1.8		3.3	V	Electrical Characteristics
	VIN	-0.3		VDD + 0.3	V	Absolute Maximum Ratings
Operating Temperature Range	TA	40		+105	C	Ordering Option L
	TA	40		+85	C	Ordering Option I
	TA	20		+70	C	Ordering Option E
Supply Current, Standby	IDD			15	A	Max. @ T = +25C
Supply Current, Standby	IDD		6.0	6.5	mA	Operating @ 1 MHz, VDD = 3.3V, CL = 0 pF, RL = , T = +25C
Output Startup Time	tSU		1.0	1.3	ms	T = +25C
Output Startup Time	tSU				ms	tSU and tEN (after EN is asserted) are identical values.
Output Disable Time	tDA		20	100	ns
Output Duty Cycle	SYM	45		55	%
Input Logic Level High	VIH	0.75 x VDD			V
Input Logic Level Low	VIL			0.25 x VDD	V	VDD = 1.8V
Output Logic Level High	VOH	0.8 x VDD			V	6 mA, DSC1004, CL = 40 pF
	VOH	0.8 x VDD			V	6 mA, DSC1003, CL = 25 pF
	VOH	0.8 x VDD			V	4 mA, DSC1001, CL = 15 pF
	VOH	0.9 x VDD			V	8 mA, DSC1004, CL = 40 pF, VDD = 3.3V
Output Logic Level Low	VOL			0.2 x VDD	V	6 mA, DSC1004, CL = 40 pF
	VOL			0.2 x VDD	V	6 mA, DSC1003, CL = 25 pF
	VOL			0.2 x VDD	V	4 mA, DSC1001, CL = 15 pF
	VOL			0.1 x VDD	V	8 mA, DSC1004, CL = 40 pF, VDD = 3.3V
Output Transition Rise Time	tR		1.4	3.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%
	tR		1.5	3.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%
	tR		1.8	3.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%
Output Transition Fall Time	tF		1.0	3.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%
	tF		1.1	3.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%
	tF		1.2	3.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%
Jitter, Max. Cycle-to-Cycle	JCC		60		ps	f = 100 MHz (Note 2)
Jitter, Max. Cycle-to-Cycle	JCC		50		ps	f = 100 MHz (Note 2), VDD = 3.3V
Period Jitter	JP		10	15	psRMS	f = 100 MHz (Note 2)
Period Jitter	JP		5	10	psRMS	f = 100 MHz (Note 2), VDD = 3.3V
ESD Protection		4			kV HBM
ESD Protection			200		V MM
ESD Protection		1.5			kV CDM
Output Load	ZL	R > 10 k, C	15	pF	Recommended Operating Conditions