silicon MEMS CMOS oscillator MICROCHIP DSC1001DI1-025.0000T with wide frequency range and stability

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Product Description

Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides enhanced reliability, making it ideal for rugged, industrial, and portable applications. Available in industry-standard packages, it serves as a pin-for-pin replacement for standard crystal oscillators.

Product Attributes

Brand: Microchip Technology Inc.
Material: Silicon MEMS
Certifications: Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Units	Conditions
Frequency Range	F0	1	-	150	MHz	Single Frequency
	f	-	-	10	ppm	10 ppm, 20 ppm, 25 ppm, 50 ppm (Stability over Temperature)
	f	-	-	5	ppm	1 year @ +25C (Aging)
	F0	1	-	150	MHz	1 MHz to 150 MHz
Operating Voltage	VDD	1.7	-	3.6	V	Recommended Operating Conditions
	VDD	1.8	-	3.3	V	Electrical Characteristics (VDD = 1.8 to 3.3V)
	VIN	-0.3	-	VDD + 0.3	V	Absolute Maximum Ratings
Operating Temperature Range	TA	-40	-	105	C	Ext. Industrial
	TA	-40	-	85	C	Industrial (Ordering Option L)
	TA	-20	-	70	C	Commercial (Ordering Option E)
Supply Current, Standby	IDD	-	-	15	A	Max., T = +25C
Supply Current, Standby	IDD	-	-	15	A	Standby (Max.)
Supply Current, Operating (No Load)	IDD	-	6.0	6.3	mA	1 MHz, CL = 0 pF, RL = , T = +25C, VDD = 1.8V
	IDD	-	6.0	6.4	mA	1 MHz, CL = 0 pF, RL = , T = +25C, VDD = 2.5V
	IDD	-	6.0	6.5	mA	1 MHz, CL = 0 pF, RL = , T = +25C, VDD = 3.3V
Output Startup Time	tSU	-	1.0	1.3	ms	T = +25C
	tSU	-	1.0	1.3	ms	Time to stable output frequency after VDD is applied
	tSU	-	1.0	1.3	ms	tSU and tEN (after EN is asserted) are identical values
Output Disable Time	tDA	-	20	100	ns	-
Output Disable Time	tDA	-	20	100	ns	-
Output Duty Cycle	SYM	45	-	55	%	-
Output Duty Cycle	SYM	45	-	55	%	-
Input Logic Level High	VIH	0.75 x VDD	-	-	V	-
Input Logic Level High	VIH	0.75 x VDD	-	-	V	-
Input Logic Level Low	VIL	-	-	0.25 x VDD	V	-
Input Logic Level Low	VIL	-	-	0.25 x VDD	V	-
Output Logic Level High	VOH	0.8 x VDD	-	-	V	6 mA, DSC1004, CL = 40 pF, VDD = 1.8V
	VOH	0.8 x VDD	-	-	V	6 mA, DSC1003, CL = 25 pF, VDD = 1.8V
	VOH	0.8 x VDD	-	-	V	4 mA, DSC1001, CL = 15 pF, VDD = 1.8V
	VOH	0.9 x VDD	-	-	V	8 mA, DSC1004, CL = 40 pF, VDD = 3.3V
	VOH	0.9 x VDD	-	-	V	6 mA, DSC1003, CL = 25 pF, VDD = 3.3V
	VOH	0.8 x VDD	-	-	V	4 mA, DSC1001, CL = 15 pF, VDD = 3.3V
Output Logic Level Low	VOL	-	-	0.2 x VDD	V	6 mA, DSC1004, CL = 40 pF, VDD = 1.8V
	VOL	-	-	0.2 x VDD	V	6 mA, DSC1003, CL = 25 pF, VDD = 1.8V
	VOL	-	-	0.2 x VDD	V	4 mA, DSC1001, CL = 15 pF, VDD = 1.8V
	VOL	-	-	0.1 x VDD	V	8 mA, DSC1004, CL = 40 pF, VDD = 3.3V
	VOL	-	-	0.1 x VDD	V	6 mA, DSC1003, CL = 25 pF, VDD = 3.3V
	VOL	-	-	0.2 x VDD	V	4 mA, DSC1001, CL = 15 pF, VDD = 3.3V
Output Transition Rise Time	tR	-	1.4	3.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 1.8V
	tR	-	1.5	3.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 1.8V
	tR	-	1.8	3.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 1.8V
	tR	-	1.0	2.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 2.5V
	tR	-	1.1	2.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 2.5V
	tR	-	1.2	2.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 2.5V
	tR	-	1.0	2.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 3.3V
	tR	-	1.1	2.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 3.3V
	tR	-	1.2	2.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 3.3V
	tR	-	1.4	3.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%
	tR	-	1.5	3.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%
	tR	-	1.8	3.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%
Output Transition Fall Time	tF	-	1.0	3.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 1.8V
	tF	-	1.1	3.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 1.8V
	tF	-	1.2	3.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 1.8V
	tF	-	0.9	2.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 2.5V
	tF	-	1.0	2.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 2.5V
	tF	-	1.1	2.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 2.5V
	tF	-	0.9	2.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%, VDD = 3.3V
	tF	-	1.0	2.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%, VDD = 3.3V
	tF	-	1.1	2.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%, VDD = 3.3V
	tF	-	1.0	3.0	ns	DSC1001, CL = 15 pF, T = +25C, 20% to 80%
	tF	-	1.1	3.0	ns	DSC1003, CL = 25 pF, T = +25C, 20% to 80%
	tF	-	1.2	3.0	ns	DSC1004, C2 = 40 pF, T = +25C, 20% to 80%
Jitter, Max. Cycle-to-Cycle	JCC	-	60	-	ps	f = 100 MHz (Note 2), VDD = 1.8V
	JCC	-	50	-	ps	f = 100 MHz (Note 2), VDD = 2.5V
	JCC	-	50	-	ps	f = 100 MHz (Note 2), VDD = 3.3V
	JCC	-	60	-	ps	f = 100 MHz (Note 2)
Period Jitter	JP	-	10	15	psRMS	f = 100 MHz (Note 2), VDD = 1.8V
	JP	-	5	10	psRMS	f = 100 MHz (Note 2), VDD = 2.5V
	JP	-	5	10	psRMS	f = 100 MHz (Note 2), VDD = 3.3V
	JP	-	10	15	psRMS	f = 100 MHz (Note 2)
Ultra Miniature Footprint	-	2.5 mm x 2.0 mm x 0.85 mm	-	-	mm	-
	-	3.2 mm x 2.5 mm x 0.85 mm	-	-	mm	-
	-	5.0 mm x 3.2 mm x 0.85 mm	-	-	mm	-
-	7.0 mm x 5.0 mm x 0.85 mm	-	-	mm	-
ESD Protection	-	4 kV HBM, 200V MM, 1.5 kV CDM	-	-	-	-
Storage Temperature Range	TA	-55	-	150	C	-
Soldering Temperature Range	TS	-	-	260	C	40 sec. max