SMD power inductor microgate MPIE201610-2R2M-LF featuring epoxy resin and magnetic powder components
SMD Power Inductor MPIE201610 Series
The MPIE201610 series is a range of SMD power inductors designed for various electronic applications. These inductors are manufactured by SHENZHEN MICROGATE TECHNOLOGY CO., LTD. and are built with high-quality materials including Ni-Zn Ferrite cores, Enameled Copper Wire, and Ag/Ni/Sn/Cu terminals.
Product Attributes
- Brand: MICROGATE
- Origin: Shenzhen, P.R.C.
- Material: Ni-Zn Ferrite Core, Enameled Copper Wire, Ag/Ni/Sn/Cu Terminals, Epoxy resin and magnetic powder
- Environmental Compliance: Lead-free products
Technical Specifications
| Microgate Part No. | Inductance (uH) | DCR () Max | DCR () Typ | Isat (A) Max | Isat (A) Typ | Irms (A) Max | Irms (A) Typ |
| MPIE201610-R24M-LF | 0.2420% | 0.032 | 0.025 | 4.50 | 4.85 | 3.70 | 4.30 |
| MPIE201610-R33M-LF | 0.3320% | 0.026 | 0.022 | 3.20 | 3.50 | 4.50 | 5.00 |
| MPIE201610-R47M-LF | 0.4720% | 0.042 | 0.035 | 2.55 | 3.60 | 2.80 | 3.00 |
| MPIE201610-R68M-LF | 0.6820% | 0.058 | 0.048 | 2.50 | 3.00 | 2.60 | 3.00 |
| MPIE201610-1R0M-LF | 1.020% | 0.070 | 0.060 | 1.85 | 2.20 | 2.50 | 2.60 |
| MPIE201610-1R5M-LF | 1.520% | 0.120 | 0.100 | 1.50 | 1.70 | 1.70 | 2.00 |
| MPIE201610-2R2M-LF | 2.220% | 0.150 | 0.125 | 1.30 | 1.60 | 1.50 | 1.60 |
| MPIE201610-4R7M-LF | 4.720% | 0.350 | 0.265 | 1.00 | 1.10 | 1.00 | 1.10 |
| MPIE201610-100M-LF | 1020% | 0.815 | 0.680 | 0.68 | 0.75 | 0.61 | 0.70 |
| MPIE201610-150M-LF | 1520% | 1.440 | 1.200 | 0.40 | 0.50 | 0.40 | 0.45 |
| MPIE201610-220M-LF | 2220% | 1.750 | 1.460 | 0.50 | 0.53 | 0.36 | 0.40 |
Dimensions: A: 2.000.20mm, B: 1.600.20mm, C: 1.00mm Max., D: 0.600.2mm, E: 0.600.2mm, f: 0.80mm Typ., g: 2.20mm Typ., h: 1.60mm Typ.
Operating Temperature: -40 ~ +125
Testing Conditions: Ordinary Temperature (5 to 35), Ordinary Humidity (25 to 85% RH). For doubtful results: Temperature 202, Humidity 60 to 75% RH, Atmospheric Pressure 86 to 106 kPa.
Inductance Test Condition: 1.0MHz/1V.
Saturation Current (Isat): Based on inductance change (|L|/L30%).
Temperature Rise Current (Irms): Based on temperature rise (T:40 TYP).
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