EMI filter array onsemi CM1630-04DE featuring four channel C-R-C filters and ESD protection in UDFN package
Product Overview
The CM1630 is a family of pi-style EMI filter arrays with integrated ESD protection, designed for compact applications. These devices feature four, six, or eight C-R-C filter channels within small form factor UDFN packages with a 0.40 mm pitch. Offering component values of 8.5 pF per channel and a cut-off frequency of 200 MHz, the CM1630 supports data rates up to 80 Mbps. Each pin is equipped with ESD diodes capable of safely dissipating ESD strikes up to 15 kV (IEC61000-4-2) and greater than 30 kV (HBM). The CM1630 is particularly well-suited for portable electronics, including mobile handsets, PDAs, and notebook computers, providing EMI filtering and protection for data and control lines of I/O ports, LCD displays, and camera interfaces. The UDFN packages offer significant board space savings compared to larger pitch packages.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant, Pb-Free
Technical Specifications
| Model | Channels | Package Type | Package Dimensions (mm) | Lead Pitch (mm) | ESD Protection (IEC 61000-4-2) | ESD Protection (HBM) | Typical Attenuation @ 1 GHz | Cut-off Frequency | Data Rate Support | Channel Capacitance (Typ.) | Resistance (Typ.) | Operating Temperature Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CM1630-04DE | 4 | UDFN-8 | 1.70 x 1.35 x 0.50 | 0.40 | 15 kV | 30 kV | > 25 dB | 200 MHz | Up to 80 Mbps | 8.5 pF | 100 | -40 to +85 C |
| CM1630-06DE | 6 | UDFN-12 | 2.50 x 1.35 x 0.50 | 0.40 | 15 kV | 30 kV | > 25 dB | 200 MHz | Up to 80 Mbps | 8.5 pF | 100 | -40 to +85 C |
| CM1630-08DE | 8 | UDFN-16 | 3.30 x 1.35 x 0.50 | 0.40 | 15 kV | 30 kV | > 25 dB | 200 MHz | Up to 80 Mbps | 8.5 pF | 100 | -40 to +85 C |
| Electrical Characteristics (Typical at 25C unless otherwise specified): | ||||||||||||
| Resistance (R) | 80 - 120 | |||||||||||
| Total Channel Capacitance (CTOTAL) | 14 - 22 pF (at 2.5 V DC Reverse Bias, 1 MHz, 30 mV AC) | |||||||||||
| Capacitance (C) | 7.0 - 11.0 pF (at 2.5 V DC Reverse Bias, 1 MHz, 30 mV AC) | |||||||||||
| Diode Stand-off Voltage (VDIODE) | 6.0 V (at IDIODE = 10 A) | |||||||||||
| Diode Leakage Current (ILEAK) | 1.0 A (at VDIODE = 3.3 V) | |||||||||||
| Signal Clamp Voltage (VSIG) | Positive: 5.6 - 6.8 V; Negative: -0.4 - -0.8 V (at ILOAD = 10 mA / -10 mA) | |||||||||||
| Absolute Attenuation @ 800 MHz to 6 GHz | 25 dB (Typical) | |||||||||||
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