onsemi NUF6410MNT1G six channel EMI filter with integrated ESD protection and cutoff frequency of 250 MHz
Product Overview
The NUF6410MN is a six-channel (C-R-C) Pi-style EMI filter array with integrated ESD protection. It features typical component values of R = 100 and C = 7 pF, providing a cutoff frequency of 250 MHz and stopband attenuation greater than -20 dB from 800 MHz to 3.0 GHz. This performance is ideal for parallel interfaces with data rates up to 167 Mbps, effectively minimizing interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The device is available in a low-profile 12-lead 1.35 mm x 3.0 mm DFN12 surface mount package, offering integrated EMI/ESD system solution for cost, reliability, and space savings. Applications include EMI filtering for LCD and camera data lines, and I/O ports and keypads.
Product Attributes
- Brand: ON Semiconductor
- Pb-Free Device: Yes
Technical Specifications
| Model | Description | ESD Protection (kV) | R/C Values | Cutoff Frequency (f3dB) | Stop Band Attenuation | Data Rate (Mbps) | Package | Ordering Information |
|---|---|---|---|---|---|---|---|---|
| NUF6410MN | 6-Channel EMI Filter with Integrated ESD Protection | 8.0 (IEC61000-4-2 Level 4, Contact Discharge) | 100 / 7 pF | 250 MHz | > -20 dB (800 MHz to 3.0 GHz) | Up to 167 | DFN12 (1.35 mm x 3.0 mm) | NUF6410MNT1G (3000 / Tape & Reel) |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Reverse Working Voltage | VRWM | 5.0 | V | |||
| Breakdown Voltage | VBR | IR = 1.0 mA | 6.0 | 7.0 | V | |
| Leakage Current | IR | VRWM = 3.3 V | 10 | 100 | nA | |
| Resistance | RA | IR = 20 mA | 85 | 100 | 115 | |
| Diode Capacitance | Cd | VR = 2.5 V, f = 1.0 MHz | 7.0 | 9.0 | pF | |
| Line Capacitance | CL | VR = 2.5 V, f = 1.0 MHz | 14 | 18 | pF | |
| 3 dB Cut-Off Frequency | f3dB | 250 | MHz | |||
| 6 dB Cut-Off Frequency | f6dB | 400 | MHz |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| ESD Discharge (Contact Discharge) | VPP | 8.0 | kV |
| DC Power per Resistor | PR | 100 | mW |
| DC Power per Package | PT | 600 | mW |
| Operating Temperature Range | TOP | -40 to 85 | C |
| Storage Temperature Range | TSTG | -55 to 150 | C |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | C |
Package Dimensions
DFN12, 3.0x1.35, 0.5P (CASE 506AD)
Refer to the provided documentation for detailed dimension specifications.
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