Metal composite thin film inductor Samsung Electro-Mechanics CIGT252010EH2R2MNF for power conversion
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The CIGT252010EH2R2MNE is a small power inductor featuring a monolithic structure for high reliability and a low DCR design for high efficiency. It is specifically designed for power circuits in mobile devices such as smartphones, tablets, and wearable devices, as well as power converter modules. This inductor is free of RoHS-regulated substances and is halogen-free.
Product Attributes
- Brand: CIGT
- Type: Metal Composite Thin Film Type
- Certifications: RoHS-regulated substances free, Halogen free
Technical Specifications
| Model | Inductance [uH] | Inductance Tolerance (%) | DC Resistance [m] (Typ.) | Rated DC Current (Isat) [A] (Max.) | Rated DC Current (Irms) [A] (Max.) | Dimensions [mm] (L x W x T) | Thickness [mm] (Max.) | Absolute Maximum Voltage [V] | Operating Temperature Range [C] |
|---|---|---|---|---|---|---|---|---|---|
| CIGT252010EH2R2MNE (1008/2520) | 2.2 | 20 | 67 | 80 | 2.6 | 2.2 0.2 x 1.0 0.2 x 2.5 0.2 | 1.0 | DC 20V | -40 to +125 |
Additional Specifications
- Inductance Measurement: Measured with a LCR meter 4991A (Agilent) or equivalent (Test Freq. 1MHz, Level 0.1V)
- DC Resistance Measurement: Measured with a Resistance HI-TESTER 3541 (HIOKI) or equivalent
- Maximum Allowable DC Current (Isat): Defined when DC current flows and the initial value of inductance has decreased by 30% (Reference: ambient temperature is 2510)
- Allowable Current of Temperature Rise (Irms): Specified when temperature of the inductor is raised 40 by DC current (Reference: ambient temperature is 2510)
- Packaging Style: Embossed Taping (3000 pcs/reel)
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina