Low DCR power inductor Samsung Electro-Mechanics CIGT201610LM2R2MNE for power management in mobile electronics
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The CIGT201610LM2R2MNE is a compact, monolithic metal composite power inductor designed for mobile devices and power converter modules. It features a low DCR structure for high efficiency and is manufactured with a thin-film, monolithic structure for enhanced reliability. This inductor is free of RoHS-regulated substances and is halogen-free, making it suitable for a wide range of electronic applications including smartphones, tablets, and wearable devices.
Product Attributes
- Certifications: RoHS-regulated substance-free, Halogen-free
Technical Specifications
| Model | Type | Dimensions (L x W x T) [mm] | Inductance [uH] | Inductance Tolerance (%) | DC Resistance (Typ.) [m] | Rated DC Current (Isat) [A] | Rated DC Current (Irms) [A] | Absolute Maximum Voltage [V] | Operating Temperature Range [C] |
|---|---|---|---|---|---|---|---|---|---|
| CIGT201610LM2R2MNE | 2016 / 0806 (Metal Composite Thin Film) | 2.0 x 1.6 x 1.0 | 2.2 | 20 | 154 (Max) / 128 (Typ.) | 1.0 (Typ.) | 1.6 (Typ.) | 20 | -40 to +125 |
Recommended Land Pattern (Unit: mm)
| A | B | C |
|---|---|---|
| 0.8 | 0.8 | 1.8 |
Packaging Information
| Type | Quantity (pcs/reel) | Dimensions (L x W x T) [mm] |
|---|---|---|
| Embossed Taping | 3000 | 2.0 0.2 x 1.6 0.2 x 1.0 max |
Reliability Test Results
| Reliability Test Item | Specified Value | Test Condition |
|---|---|---|
| Solderability | More than 90% of terminal electrode should be soldered newly. | Dipped in flux for 41 sec, preheated at 150180 for 23 min, immersed in solder at 2455 for 41 sec. |
| Resistance to Soldering | No mechanical damage. Remaining terminal Electrode: 75% min. Inductance change to be within 20% to the initial. | Dipped in flux for 41 sec, preheated at 150180 for 23 min, immersed in solder at 2605 for 10 0.5 sec. |
| Thermal Shock (Temperature Cycle test) | No mechanical damage. Inductance change to be within 20% to the initial. | Repeat 100 cycles: -403 for 30 min 853 for 30 min. |
| High Temp. Humidity Resistance Test | No mechanical damage. Inductance change to be within 20% to the initial. | 852, 85%RH, for 50012 hours. Measure after 24 hours at normal temp/humidity. |
| Low Temperature Test | No mechanical damage. Inductance change to be within 20% to the initial. | Solder on PCB. Exposure at -552 for 50012 hours. Measure after 24 hours at normal temp/humidity. |
| High Temperature Test | No mechanical damage. Inductance change to be within 20% to the initial. | Solder on PCB. Exposure at 1252 for 50012 hours. Measure after 24 hours at normal temp/humidity. |
| High Temp. Humidity Resistance Loading Test | No mechanical damage. Inductance change to be within 20% to the initial. | 852, 85%RH, Rated Current for 50012 hours. Measure after 24 hours at normal temp/humidity. |
| High Temperature Loading Test | No mechanical damage. Inductance change to be within 20% to the initial. | 852, Rated Current for 50012 hours. Measure after 24 hours at normal temp/humidity. |
| Reflow Test | No mechanical damage. Inductance change to be within 20% to the initial. | Peak 2605, 3 times. |
| Vibration Test | No mechanical damage. Inductance change to be within 20% to the initial. | Solder on PCB. Vibrate 10~55Hz, 1.5mm amplitude for 2 hours each in X, Y, Z axes (total 6 hours). |
| Bending Test | No mechanical damage. | Bending Limit: 2mm. Test Speed: 1.0mm/sec. Keep at limit point for 5 sec. PCB thickness: 1.6mm. |
| Drop Test | No mechanical damage. Inductance change to be within 20% to the initial. | Random Free Fall test on concrete plate. 1 meter, 10 drops. |
| Terminal Adhesion Test | No indication of peeling shall occur on the terminal electrode. | 0.5 kgf for 101 sec. |
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina