programmable oscillator YXC Crystal Oscillators O705024576MEDH4MI with wide frequency range and fast startup

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Product Description

Product Overview

The YSO8008MR is a low power programmable oscillator designed as a 100% pin-to-pin drop-in replacement for quartz-based oscillators. It offers a wide operating temperature range, low power consumption, and standby mode for extended battery life with a fast startup time. The device features LVCMOS/HCMOS compatible output and is available in industry-standard packages. It is ideal for high-speed serial protocols and various electronic devices.

Product Attributes

Brand: YXC (implied by URL)
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: MIL-STD-883F, JESD22

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Condition
Frequency Range
Output Frequency Range	f	1	-	110	MHz	-
Frequency Stability and Aging
Frequency Stability	F_stab	-20	-	+20	ppm	Inclusive of initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply voltage and load.
Frequency Stability	F_stab	-25	-	+25	ppm	-
Frequency Stability	F_stab	-50	-	+50	ppm	-
Operating Temperature Range
Operating Temperature Range	T_use	-20	-	+70	C	Commercial
Operating Temperature Range	T_use	-40	-	+85	C	Industrial
Supply Voltage and Current Consumption
Supply Voltage	Vdd	2.25	2.5	2.75	V	-
Supply Voltage	Vdd	2.52	2.8	3.08	V	-
Supply Voltage	Vdd	2.7	3.0	3.3	V	-
Supply Voltage	Vdd	2.97	3.3	3.63	V	-
Supply Voltage	Vdd	2.25	-	3.63	V	-
Current Consumption	Idd	-	3.8	4.5	mA	No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
Current Consumption	Idd	-	3.7	4.2	mA	No load condition, f = 20 MHz, Vdd = 2.5V
Current Consumption	Idd	-	3.5	4.1	mA	No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current	I_OD	-	-	4.2	mA	Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
OE Disable Current	I_OD	-	-	4.0	mA	Vdd = 1.8V, OE = GND, Output in high-Z state
Standby Current	I_std	-	2.1	4.3	A	ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
Standby Current	I_std	-	1.1	2.5	A	ST = GND, Vdd = 2.5V, Output is weakly pulled down
Standby Current	I_std	-	0.2	1.3	A	ST = GND, Vdd = 1.8V, Output is weakly pulled down
LVCMOS Output Characteristics
Duty Cycle	DC	45	-	55	%	All Vdds. See Duty Cycle definition in Figure 3 and Footnote 8
Rise/Fall Time	Tr, Tf	-	1	2	ns	Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Rise/Fall Time	Tr, Tf	-	1.3	2.5	ns	Vdd =1.8V, 20% - 80%
Rise/Fall Time	Tr, Tf	-	-	2	ns	Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage	VOH	90%	-	-	Vdd	IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage	VOL	-	-	10%	Vdd	IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage	VIH	70%	-	-	Vdd	Pin 1, OE or ST
Input Low Voltage	VIL	-	-	30%	Vdd	Pin 1, OE or ST
Input Pull-up Impedance	Z_in	50	87	150	k	Pin 1, OE logic high or logic low, or ST logic high
Input Pull-up Impedance	Z_in	2	-	M	Pin 1, ST logic low
Startup and Resume Timing
Startup Time	T_start	-	-	5	ms	Measured from the time Vdd reaches its rated minimum value
Enable/Disable Time	T_oe	-	-	130	ns	f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Resume Time	T_resume	-	-	5	ms	Measured from the time ST pin crosses 50% threshold
Jitter
RMS Period Jitter	T_jitt	-	1.8	3	ps	f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
RMS Period Jitter	T_jitt	-	1.8	3	ps	f = 75 MHz, Vdd = 1.8V
Peak-to-peak Period Jitter	T_pk	-	12	25	ps	f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
Peak-to-peak Period Jitter	T_pk	-	14	30	ps	f = 75 MHz, Vdd = 1.8V
RMS Phase Jitter (random)	T_phj	-	0.5	0.9	ps	f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
RMS Phase Jitter (random)	T_phj	-	1.3	2	ps	f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Absolute Maximum Limits
Storage Temperature	-	-65	-	150	C	-
Vdd	-	-0.5	-	4	V	-
Electrostatic Discharge	-	-	-	2000	V	-
Soldering Temperature	-	-	-	260	C	follow standard Pb free soldering guidelines
Junction Temperature	-	-	-	150	C	Exceeding this temperature for extended period of time may damage the device.