Robust DC Input Phototransistor Optocoupler CT MICRO CT816D SL T3 H for in Electronic Control Systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The CT816 Series is a 4-pin phototransistor optocoupler featuring high isolation (5000 VRMS) and DC input with a transistor output. Designed for reliability and performance, it offers flexible Current Transfer Ratio (CTR) options and operates across a wide temperature range of -55 C to 110 C. The optocoupler is suitable for applications in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. It meets various international regulatory approvals including UL, VDE, CQC, and IEC standards.
Product Attributes
- Brand: CT Micro
- Series: CT816 Series
- Type: DC Input 4-Pin Phototransistor Optocoupler
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper
Technical Specifications
| Parameter | Rating | Unit | Notes |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Isolation Voltage (AC, 1 minute) | 5000 | VRMS | |
| Total Power Dissipation | 200 | mW | |
| Operating Temperature | -55 ~ +110 | C | |
| Storage Temperature | -55 ~ +150 | C | |
| Soldering Temperature | 260 | C | |
| Emitter Characteristics | |||
| Forward Current (IF) | 60 | mA | |
| Peak Transient Current (IF(TRANS)) | 1 | A | (1s P.W, 300pps) |
| Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 100 | mW | |
| Detector Characteristics | |||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | |
| Collector Current (IC) | 50 | mA | |
| Electrical Characteristics (TA = 25C unless otherwise specified) | |||
| Forward Voltage (VF) | - 1.24 1.4 | V | IF=10mA |
| Reverse Current (IR) | - - 5 | A | VR = 6V |
| Input Capacitance (CIN) | - 30 - | pF | f=1MHz |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 - - | V | IC= 100A |
| Emitter-Collector Breakdown Voltage (BVECO) | 6 - - | V | IE= 100A |
| Collector-Emitter Dark Current (ICEO) | - - 100 | nA | VCE= 20V, IF=0mA |
| Transfer Characteristics | |||
| Current Transfer Ratio (CTR) CT816 | 50 - 600 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816A | 80 - 160 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816B | 130 - 260 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816C | 200 - 400 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816D | 300 - 600 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816F | 100 - 200 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816I | 63 - 125 | % | IF= 10mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816J | 100 - 200 | % | IF= 10mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816K | 160 - 320 | % | IF= 10mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816I | 22 - - | % | IF= 1mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816J | 34 - - | % | IF= 1mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT816K | 56 - - | % | IF= 1mA, VCE= 5V |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - 0.1 0.2 | V | IF= 20mA, IC= 1mA |
| Isolation Resistance (RIO) | 5x1010 - - | VIO= 500VDC | |
| Isolation Capacitance (CIO) | - 0.25 1 | pF | f=1MHz |
| Switching Characteristics | |||
| Rise Time (tr) | - 6 - | s | IC= 2mA, VCE= 2V, RL= 100 |
| Fall Time (tf) | - 8 - | s | |
| Package Dimensions | |||
| Spatial Distance (S/SL Type) | 7.5 | mm | |
| Spatial Distance (M/SLM Type) | 8.0 | mm | |
| External Creepage | 7.4 | mm | |
| Distance Through Isolation | 0.4 | mm | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina