Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
Verified Supplier
17 Years
Since 2009
Menu

photocoupler Toshiba TLP2301 TPL E featuring GaAAs infrared LED optically coupled to photo IC detector

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The Toshiba TLP2301 is a high-speed photocoupler featuring a GaAAs infrared LED optically coupled to a photo-IC detector. Housed in an SO6 package, it offers early switching characteristics and supports transmission rates of up to 20 kbps, bridging the gap between general-purpose transistor couplers and 1 Mbps IC couplers. It is suitable for applications in industrial inverters, communications equipment, and home electric appliances.

Product Attributes

  • Brand: Toshiba
  • Material: GaAAs Infrared LED & Photo IC
  • Certifications: UL-approved (UL1577), cUL-approved (CSA), VDE-approved (EN60747-5-5, EN60065 or EN60950-1, EN62368-1 Pending), CQC-approved (GB4943.1, GB8898)
  • Start of Commercial Production: 2013-03
  • Factory Locations: Japan and Thailand

Technical Specifications

CharacteristicSymbolConditionMinTyp.MaxUnit
Features
Collector-emitter voltageVCEO40V
Current transfer ratioIC/IFIF = 1 mA, VCE = 5 V50%%
Current transfer ratio (Rank GB)IC/IFIF = 1 mA, VCE = 5 V100%%
Isolation voltageBVSAC, 60 s, R.H. 60%3750Vrms
Propagation delay time (H/L)tpHLIF = 1 mA, RL = 10 k, Ta = 25 1530s
Propagation delay time (L/H)tpLHIF = 1 mA, RL = 10 k, Ta = 25 830s
Operating temperatureTopr-55125
Absolute Maximum Ratings
Input forward currentIF50mA
Input reverse voltageVR5V
Input power dissipationPD100mW
Junction temperature (LED)Tj135
Collector-emitter voltageVCEO40V
Collector currentIC50mA
Collector power dissipationPC150mW
Junction temperature (Detector)Tj135
Storage temperatureTstg-55125
Lead soldering temperatureTsol(10 s)260
Total power dissipationPT200mW
Electrical Characteristics (LED)
Input forward voltageVFIF = 10 mA1.11.251.4V
Input reverse currentIRVR = 5 V10A
Input capacitanceCtV = 0 V, f = 1 MHz30pF
Collector-emitter breakdown voltageV(BR)CEOIC = 0.1 mA40V
Emitter-collector breakdown voltageV(BR)ECOIE = 0.1 mA7V
Dark CurrentIDARKVCE = 40 V0.010.08A
Collector-emitter capacitanceCCEV = 0 V, f = 1 MHz250pF
Electrical Characteristics (Coupled)
Current transfer ratioIC/IFIF = 1 mA, VCE = 5 V50%600%%
Current transfer ratio (Rank GB)IC/IF(sat)IF = 1 mA, VCE = 5 V100%600%%
Collector-emitter saturation voltageVCE(sat)IC = 2.4 mA, IF = 8 mA0.20.3V
OFF-state collector currentIC(off)VF = 0.7 V, VCE = 40 V0.3A
Isolation Characteristics
Total capacitance (input to output)CSVS = 0 V, f = 1 MHz0.8pF
Isolation resistanceRSVS = 500 V, R.H. 60%1 10121014
Isolation voltageBVSAC, 60 s3750Vrms
Mechanical Parameters
Creepage distancesMin5.0mm
ClearanceMin5.0mm
Internal isolation thicknessMin0.4mm

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

Request A Quote

Please check your email address.
Your message must be at least 20 characters.