photocoupler TOSHIBA TLP2662D4TP1F with high gain photoreceptor chip and UL cUL VDE certifications
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Product Description
Product Overview
The TLP2662/TLP2662F are photocouplers featuring high-intensity GaAAs infrared LEDs optically coupled to a high-gain, high-speed photoreceptor chip. Designed for operation up to 125C and on supplies from 2.7 V to 5.5 V, these devices offer a space-saving solution with two LED-photoreceptor pairs in a DIP8 package. An internal noise shield provides superior common-mode rejection of 20 kV/s.
Product Attributes
- Brand: Toshiba
- Certifications: UL-approved (UL1577), cUL-approved (CSA), VDE-approved (EN60747-5-5)
Technical Specifications
| Characteristic | TLP2662 | TLP2662F | Unit |
| Creepage distances | 7.0 (min) | 8.0 (min) | mm |
| Clearance distances | 7.0 (min) | 8.0 (min) | mm |
| Internal isolation thickness | 0.4 (min) | 0.4 (min) | mm |
| Pitch | 7.62-mm | 10.16-mm |
| Characteristic | Symbol | Rating | Unit | Note |
| Input forward current | IF | 20 | mA | Each channel |
| Input forward current derating | IF/Ta | -0.6 | mA/ | (Ta 116 ), Each channel |
| Input forward current (pulsed) | IFP | 40 | mA | Each channel |
| Input power dissipation | PD | 40 | mW | Each channel |
| Input power dissipation derating | PD/Ta | -1.17 | mW/ | (Ta 116 ), Each channel |
| Input reverse voltage | VR | 5 | V | |
| Output current | IO | 25 | mA | |
| Output voltage | VO | 6 | V | |
| Supply voltage | VCC | 6 | V | |
| Output power dissipation | PO | 85 | mW | |
| Output power dissipation derating | PO/Ta | -2.1 | mW/ | (Ta 110 ) |
| Operating temperature | Topr | -40 to 125 | ||
| Storage temperature | Tstg | -55 to 150 | ||
| Lead soldering temperature | Tsol | 260 | (10 s) | |
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s., R.H. 60 % |
| Characteristic | Symbol | Min | Typ. | Max | Unit | Note |
| Input forward voltage | VF | 1.45 | 1.55 | 1.7 | V | IF = 10 mA, Ta = 25 |
| Input forward voltage temperature coefficient | VF/Ta | -2.0 | mV/ | IF = 10 mA | ||
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 | ||
| Input capacitance | Ct | 60 | pF | V = 0 V, f = 1 MHz, Ta = 25 | ||
| High-level output current | IOH | 50 | A | VF = 0.8 V, VO = 5.5 V, VCC = 5.5 V | ||
| Low-level output voltage | VOL | 0.2 | 0.6 | V | IF = 10 mA, IO = 13 mA (Sinking) | |
| Low-level supply current | ICCL | 3.8 | 8 | mA | IF1 =IF2 = 10 mA | |
| High-level supply current | ICCH | 3.4 | 8 | mA | IF1 =IF2 = 0 mA | |
| Threshold input current (H/L) | IFHL | 1.3 | 2.8 | mA | IO = 13 mA (Sinking), VO |
| Characteristic | Symbol | Min | Typ. | Max | Unit | Note |
| Total capacitance (input to output) | CS | 1.0 | pF | VS = 0 V, f = 1 MHz | ||
| Isolation resistance | RS | 1 1012 | 1014 | VS = 500 V, R.H. 60 % | ||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s | ||
| Isolation voltage | BVS | 10000 | Vrms | AC, 1 s in oil | ||
| Isolation voltage | BVS | 10000 | Vdc | DC, 60 s in oil |
| Characteristic | Symbol | Min | Typ. | Max | Unit | Note |
| Propagation delay time (H/L) | tpHL | 27 | 75 | ns | IF = 0 7.5 mA, RL = 350 , CL = 15 pF | |
| Propagation delay time (L/H) | tpLH | 25 | 75 | ns | IF = 7.5 0 mA, RL = 350 , CL = 15 pF | |
| Pulse width distortion | 35 | ns | IF = 0 7.5 mA, RL = 350 , CL = 15 pF | |||
| Propagation delay skew (device to device) | tpsk | -40 | 40 | ns | IF = 0 7.5 mA, RL = 350 , CL = 15 pF | |
| Fall time | tf | 3 | ns | IF = 0 7.5 mA, RL = 350 , CL = 15 pF | ||
| Rise time | tr | 12 | ns | IF = 7.5 0 mA, RL = 350 , CL = 15 pF | ||
| Common-mode transient immunity at output high | CMH | 20 | 25 | kV/s | VCM = 1000 Vp-p, IF = 0 mA, VCC = 3.3 V/5 V, Ta = 25 | |
| Common-mode transient immunity at output low | CML | 20 | 25 | kV/s | VCM = 1000 Vp-p, IF = 10 mA, VCC = 3.3 V/5 V, Ta = 25 |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina