CT MICRO CT452 T1 4 Pin Mini Flat Optocoupler with High Isolation Voltage and Wide Temperature Range
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Product Description
Product Overview
The CT452 is a DC input, 4-pin Mini-Flat High BVCEO Photo Darlington Optocoupler from CT Micro. It features high isolation of 3750 VRMS, a high BVCEO of 350V, and an operating temperature range of -55 C to 100 C. This green package optocoupler is designed for applications in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. It consists of a high power photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode.
Product Attributes
- Brand: CT Micro
- Package Type: 4-Pin Mini-Flat
- Color: Green Package
- Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Isolation Voltage (VISO) | 3750 | VRMS | ||||
| Operating Temperature (TOPR) | -55 | 100 | C | |||
| Storage Temperature (TSTG) | -55 | 125 | C | |||
| Soldering Temperature (TSOL) | 260 | C | ||||
| Total Power Dissipation (PTOT) | 170 | mW | ||||
| Emitter Characteristics | ||||||
| Forward Current (IF) | 60 | mA | ||||
| Peak Transient Current (IF(TRANS)) | (1s P.W,300pps) | 1 | A | |||
| Reverse Voltage (VR) | 6 | V | ||||
| Power Dissipation (PC) | 150 | mW | ||||
| Detector Characteristics | ||||||
| Power Dissipation (PD) | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage (BVCEO) | IC= 100A | 350 | V | |||
| Emitter-Collector Breakdown Voltage (BVECO) | IE= 100A | 0.1 | V | |||
| Collector Current (IC) | 150 | mA | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | ||||||
| Forward Voltage (VF) | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Current (IR) | VR = 5V | 5 | A | |||
| Input Capacitance (CIN) | f= 1MHz | 15 | pF | |||
| Collector-Emitter Breakdown Voltage (BVCEO) | IC= 100A | 350 | V | |||
| Emitter-Collector Breakdown Voltage (BVECO) | IE= 100A | 0.1 | V | |||
| Collector-Emitter Dark Current (ICEO) | VCE= 200V, IF=0mA | 100 | nA | |||
| Current Transfer Ratio (CTR) | IF= 1mA, VCE= 2V | 1000 | 15000 | % | ||
| Collector-Emitter Saturation Voltage (VCE(SAT)) | IF= 20mA, IC= 100mA | 1.2 | V | |||
| Isolation Resistance (RIO) | VIO= 500VDC | 5x1010 | ||||
| Isolation Capacitance (CIO) | f= 1MHz | 0.6 | pF | |||
| Switching Characteristics | ||||||
| Rise Time (tr) | IC=2mA, VCE= 2V, RL= 100 | 250 | s | |||
| Fall Time (tf) | 95 | |||||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina