CT MICRO CT816D3S T3 H DC input phototransistor optocoupler with iron lead frame and transistor output
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Product Description
Product Overview
The CT816D3 series is a DC input phototransistor optocoupler featuring a gallium arsenide infrared-emitting diode coupled to a phototransistor in a 4-lead DIP package. It offers high isolation of 5000 VRMS and is designed for applications requiring efficient signal coupling with a transistor output. Key features include a wide operating temperature range of -55 C to 110 C and the availability of CTR flexibility through order information. This optocoupler is suitable for use in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Product Type: Phototransistor Optocoupler
- Input Type: DC Input
- Output Type: Transistor Output
- Package Type: 4-Pin DIP
- Material Option: Green (G) or Non-green
- Lead Frame Option: Iron (H) or Copper (None)
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Isolation Voltage (VISO) | 5000 | VRMS | ||||
| Total Power Dissipation (PTOT) | 200 | mW | ||||
| Operating Temperature (TOPR) | -55 | 110 | C | |||
| Storage Temperature (TSTG) | -55 | 150 | C | |||
| Soldering Temperature (TSOL) | 260 | C | ||||
| Emitter Forward Current (IF) | 60 | mA | ||||
| Emitter Peak Transient Current (IF(TRANS)) | 1s P.W, 300pps | 1 | A | |||
| Emitter Reverse Voltage (VR) | 6 | V | ||||
| Emitter Power Dissipation (PD) | 100 | mW | ||||
| Detector Power Dissipation (PD) | 150 | mW | ||||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | ||||
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | ||||
| Collector Current (IC) | 50 | mA | ||||
| Electrical Characteristics (TA = 25C unless otherwise specified) | ||||||
| Forward Voltage (VF) | IF=10mA | 1.24 | 1.4 | V | ||
| Reverse Current (IR) | VR = 6V | 5 | A | |||
| Input Capacitance (CIN) | f=1MHz | 30 | pF | |||
| Collector-Emitter Breakdown Voltage (BVCEO) | IC= 100A | 80 | V | |||
| Emitter-Collector Breakdown Voltage (BVECO) | IE= 100A | 6 | V | |||
| Collector-Emitter Dark Current (ICEO) | VCE= 20V, IF=0mA | 100 | nA | |||
| Current Transfer Ratio (CTR) | IF= 5mA, VCE= 5V | 300 | 450 | % | ||
| Current Transfer Ratio (CTR) | IF= 0.1mA, VCE= 0.4V | 10 | 30 | % | ||
| Collector-Emitter Saturation Voltage (VCE(SAT)) | IF= 20mA, IC= 1mA | 0.1 | 0.2 | V | ||
| Isolation Resistance (RIO) | VIO= 500VDC | 5x1010 | ||||
| Isolation Capacitance (CIO) | f=1MHz | 0.5 | 1 | pF | ||
| Switching Characteristics | ||||||
| Rise Time (tr) | IC= 2mA, VCE= 2V, RL= 100 | 6 | s | |||
| Fall Time (tf) | 8 | s | ||||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina